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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK681A-AZ

2SK681A-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

4,181 -
2SK681A-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03M6DNS-WS#J5

RJK03M6DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,610 -
RJK03M6DNS-WS#J5

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2762UGR-E1-AT

UPA2762UGR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,500 -
UPA2762UGR-E1-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03M6DPA-WS#J5A

RJK03M6DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,740 -
RJK03M6DPA-WS#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03C1DPB-00#J5

RJK03C1DPB-00#J5

MOSFET N-CH 30V 60A LFPAK

Renesas Electronics Corporation

7,198 -
RJK03C1DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Ta) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount - 42 nC @ 4.5 V 30 V ±20V 6000 pF @ 10 V - Schottky Diode (Body) LFPAK - 65W (Tc) 150°C (TJ)
RJK0332DPB-01#J0

RJK0332DPB-01#J0

MOSFET N-CH 30V 35A LFPAK

Renesas Electronics Corporation

2,500 -
RJK0332DPB-01#J0

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 4.5V, 10V 4.7mOhm @ 17.5A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 4.5 V 30 V ±20V 2180 pF @ 10 V - - LFPAK - 45W (Tc) 150°C (TJ)
RJK03M5DPA-00#J5A

RJK03M5DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

5,970 -
RJK03M5DPA-00#J5A

数据表

- 8-WFDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4.5V, 10V 6.5mOhm @ 15A, 10V Surface Mount - 10.4 nC @ 4.5 V 30 V ±20V 1890 pF @ 10 V - - 8-WPAK - 30W (Tc) 150°C (TJ)
N0602N-S19-AY

N0602N-S19-AY

MOSFET N-CH 60V 100A TO220-3

Renesas Electronics Corporation

2,846 -
N0602N-S19-AY

数据表

- TO-220-3 Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.6mOhm @ 50A, 10V Through Hole - 133 nC @ 10 V 60 V ±20V 7730 pF @ 25 V - - TO-220-3 - 1.5W (Ta), 156W (Tc) 150°C (TJ)
RJK03J7DPA-00#J5A

RJK03J7DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics Corporation

60,000 -
RJK03J7DPA-00#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2736GR-E1-AX

UPA2736GR-E1-AX

MOSFET P-CH 30V 14A 8SOP

Renesas Electronics Corporation

3,745 -
UPA2736GR-E1-AX

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 7mOhm @ 14A, 10V Surface Mount - 80 nC @ 10 V 30 V ±20V 3400 pF @ 10 V - - 8-SOP - 2.5W (Ta) 150°C
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