| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SK681A-AZN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
4,181 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03M6DNS-WS#J5N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
3,610 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2762UGR-E1-ATN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03M6DPA-WS#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,740 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03C1DPB-00#J5MOSFET N-CH 30V 60A LFPAK Renesas Electronics Corporation |
7,198 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Ta) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | Surface Mount | - | 42 nC @ 4.5 V | 30 V | ±20V | 6000 pF @ 10 V | - | Schottky Diode (Body) | LFPAK | - | 65W (Tc) | 150°C (TJ) |
|
RJK0332DPB-01#J0MOSFET N-CH 30V 35A LFPAK Renesas Electronics Corporation |
2,500 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Ta) | 4.5V, 10V | 4.7mOhm @ 17.5A, 10V | Surface Mount | 2.5V @ 1mA | 14 nC @ 4.5 V | 30 V | ±20V | 2180 pF @ 10 V | - | - | LFPAK | - | 45W (Tc) | 150°C (TJ) |
|
RJK03M5DPA-00#J5AMOSFET N-CH 30V 30A 8WPAK Renesas Electronics Corporation |
5,970 | - |
|
数据表 |
- | 8-WFDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | Surface Mount | - | 10.4 nC @ 4.5 V | 30 V | ±20V | 1890 pF @ 10 V | - | - | 8-WPAK | - | 30W (Tc) | 150°C (TJ) |
|
N0602N-S19-AYMOSFET N-CH 60V 100A TO220-3 Renesas Electronics Corporation |
2,846 | - |
|
数据表 |
- | TO-220-3 Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 4.6mOhm @ 50A, 10V | Through Hole | - | 133 nC @ 10 V | 60 V | ±20V | 7730 pF @ 25 V | - | - | TO-220-3 | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) |
|
RJK03J7DPA-00#J5AN-CHANNEL POWER SWITCHING MOSFET Renesas Electronics Corporation |
60,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2736GR-E1-AXMOSFET P-CH 30V 14A 8SOP Renesas Electronics Corporation |
3,745 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 7mOhm @ 14A, 10V | Surface Mount | - | 80 nC @ 10 V | 30 V | ±20V | 3400 pF @ 10 V | - | - | 8-SOP | - | 2.5W (Ta) | 150°C |