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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSMN9R0-30LL,115MOSFET N-CH 30V 21A 8DFN NXP USA Inc. |
4,317 | - |
|
数据表 |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 4.5V, 10V | 9mOhm @ 5A, 10V | Surface Mount | 2.15V @ 1mA | 20.6 nC @ 10 V | 30 V | ±20V | 1193 pF @ 15 V | - | - | 8-DFN3333 (3.3x3.3) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
PMN45EN,135MOSFET N-CH 30V 5.2A 6TSOP NXP USA Inc. |
430,515 | - |
|
数据表 |
TrenchMOS™ | SC-74, SOT-457 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 5.2A (Tc) | - | 40mOhm @ 3A, 10V | Surface Mount | 2V @ 1mA | 6.1 nC @ 4.5 V | 30 V | 20V | 495 pF @ 25 V | - | - | 6-TSOP | - | 1.75W (Tc) | 150°C (TJ) |
|
BSH205,215MOSFET P-CH 12V 750MA TO236AB NXP USA Inc. |
3,907 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 750mA (Ta) | 1.8V, 4.5V | 400mOhm @ 430mA, 4.5V | Surface Mount | 680mV @ 1mA (Typ) | 3.8 nC @ 4.5 V | 12 V | ±8V | 200 pF @ 9.6 V | - | - | SOT-23 (TO-236AB) | - | 417mW (Ta) | -55°C ~ 150°C (TJ) |
|
PMFPB8040XP,115MOSFET P-CH 20V 2.7A HUSON6 NXP USA Inc. |
98,223 | - |
|
数据表 |
- | 6-UFDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.7A (Ta) | 1.8V, 4.5V | 102mOhm @ 2.7A, 4.5V | Surface Mount | 1V @ 250µA | 8.6 nC @ 4.5 V | 20 V | ±12V | 550 pF @ 10 V | - | Schottky Diode (Isolated) | 6-HUSON (2x2) | - | 485mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) |
|
PMZ250UN,315MOSFET N-CH 20V 2.28A SOT883 NXP USA Inc. |
83,637 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PSMN5R8-30LL,115MOSFET N-CH 30V 40A 8DFN NXP USA Inc. |
3,220 | - |
|
数据表 |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 5.8mOhm @ 10A, 10V | Surface Mount | 2.15V @ 1mA | 24 nC @ 10 V | 30 V | ±20V | 1316 pF @ 15 V | - | - | 8-DFN3333 (3.3x3.3) | - | 55W (Tc) | -55°C ~ 150°C (TJ) |
|
BSP100,135NEXPERIA BSP100 - 3.5A, 30V, 0.1 NXP Semiconductors |
23,578 | - |
|
数据表 |
TrenchMOS™ | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.2A (Ta) | 4.5V, 10V | 100mOhm @ 2.2A, 10V | Surface Mount | 2.8V @ 1mA | 6 nC @ 10 V | 30 V | ±20V | 250 pF @ 20 V | - | - | SOT-223 | - | 8.3W (Tc) | -65°C ~ 150°C (TJ) |
|
PMXB65ENE,147NOW NEXPERIA PMXB65ENE - SMALL S NXP USA Inc. |
2,082 | - |
|
数据表 |
- | 3-XDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.2A (Ta) | 4.5V, 10V | 67mOhm @ 3.2A, 10V | Surface Mount | 2.5V @ 250µA | 11 nC @ 10 V | 30 V | ±20V | 295 pF @ 15 V | - | - | DFN1010D-3 | - | 400mW (Ta), 8.33W (Tc) | -55°C ~ 150°C (TJ) |
SOT223-1.jpg)
|
PHT6N06LT,135MOSFET N-CH 55V 2.5A SOT223 NXP USA Inc. |
8,817 | - |
|
数据表 |
TrenchMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 5V | 150mOhm @ 5A, 5V | Surface Mount | 2V @ 1mA | 4.5 nC @ 5 V | 55 V | ±13V | 330 pF @ 25 V | - | - | SC-73 | - | 1.8W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) |
|
BUK6209-30C,118MOSFET N-CH 30V 50A DPAK NXP USA Inc. |
9,725 | - |
|
数据表 |
TrenchMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Ta) | - | 9.8mOhm @ 12A, 10V | Surface Mount | 2.8V @ 1mA | 30.5 nC @ 10 V | 30 V | ±16V | 1760 pF @ 25 V | AEC-Q101 | - | DPAK | Automotive | 80W (Ta) | -55°C ~ 175°C (TJ) |
