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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PHT6N06T,135

PHT6N06T,135

MOSFET N-CH 55V 5.5A SOT223

NXP USA Inc.

2,110 -
PHT6N06T,135

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 150mOhm @ 5A, 10V Surface Mount 4V @ 1mA 5.6 nC @ 10 V 55 V ±20V 175 pF @ 25 V - - SC-73 - 8.3W (Tc) -55°C ~ 150°C (TJ)
PMPB12UN,115

PMPB12UN,115

MOSFET N-CH 20V 7.9A 6DFN

NXP USA Inc.

5,490 -
PMPB12UN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.9A (Ta) 1.8V, 4.5V 18mOhm @ 7.9A, 4.5V Surface Mount 1V @ 250µA 13 nC @ 4.5 V 20 V ±8V 886 pF @ 10 V - - 6-DFN2020MD (2x2) - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PH1225AL,115

PH1225AL,115

MOSFET N-CH 25V 100A LFPAK56

NXP USA Inc.

20,733 -
PH1225AL,115

数据表

TrenchMOS™ SOT-1023, 4-LFPAK Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) - 1.2mOhm @ 15A, 10V Surface Mount 2.15V @ 1mA 105 nC @ 10 V 25 V - 6380 pF @ 12 V - - LFPAK56; Power-SO8 - - -
BUK6213-30A,118

BUK6213-30A,118

TRANSISTOR >30MHZ

NXP USA Inc.

4,990 -
BUK6213-30A,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 13mOhm @ 10A, 10V Surface Mount 3V @ 1mA 44 nC @ 10 V 30 V ±16V 1986 pF @ 25 V AEC-Q101 - DPAK Automotive 102W (Tc) -55°C ~ 175°C (TJ)
BUK6228-55C,118

BUK6228-55C,118

PFET, 31A I(D), 55V, 0.044OHM, 1

NXP USA Inc.

2,867 -
BUK6228-55C,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 29mOhm @ 10A, 10V Surface Mount 2.8V @ 1mA 20.2 nC @ 10 V 55 V ±16V 1340 pF @ 25 V AEC-Q101 - DPAK Automotive 60W (Tc) -55°C ~ 175°C (TJ)
BUK7880-55,135

BUK7880-55,135

MOSFET N-CH 55V 3.5A SOT223

NXP USA Inc.

7,561 -
BUK7880-55,135

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 10V 80mOhm @ 5A, 10V Surface Mount 4V @ 1mA - 55 V ±16V 500 pF @ 25 V AEC-Q101 - SC-73 Automotive 1.8W (Ta) -55°C ~ 150°C (TJ)
PSMN017-30LL,115

PSMN017-30LL,115

MOSFET N-CH 30V 15A 8DFN

NXP USA Inc.

7,086 -
PSMN017-30LL,115

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V Surface Mount 2.15V @ 1mA 10 nC @ 10 V 30 V ±20V 526 pF @ 15 V - - 8-DFN3333 (3.3x3.3) - 37W (Tc) -55°C ~ 150°C (TJ)
PHP110NQ08LT,127

PHP110NQ08LT,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.

2,412 -
PHP110NQ08LT,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 8.5mOhm @ 25A, 10V Through Hole 2V @ 1mA 127.3 nC @ 10 V 75 V ±20V 6631 pF @ 25 V - - TO-220AB - 230W (Tc) -55°C ~ 175°C (TJ)
BUK7225-55A,118

BUK7225-55A,118

N-CHANNEL TRENCHMOS STANDARD LEV

NXP Semiconductors

9,604 -
BUK7225-55A,118

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 43A (Ta) 10V 25mOhm @ 25A, 10V Surface Mount 4V @ 1mA - 55 V ±20V 1310 pF @ 25 V - - DPAK - 94W (Ta) -55°C ~ 175°C (TJ)
BUK95150-55A,127

BUK95150-55A,127

MOSFET N-CH 55V 13A TO220AB

NXP USA Inc.

7,691 -
BUK95150-55A,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 4.5V, 10V 137mOhm @ 13A, 10V Through Hole 2V @ 1mA - 55 V ±10V 339 pF @ 25 V - - TO-220AB - 53W (Tc) -55°C ~ 175°C (TJ)
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