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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BUK7535-55A,127PFET, 35A I(D), 55V, 0.035OHM, 1 NXP USA Inc. |
9,896 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 35mOhm @ 20A, 10V | Through Hole | 4V @ 1mA | - | 55 V | ±20V | 872 pF @ 25 V | - | - | TO-220AB | - | 85W (Tc) | -55°C ~ 175°C (TJ) |
|
BSH207,135MOSFET P-CH 12V 1.52A 6TSOP NXP USA Inc. |
50,873 | - |
|
数据表 |
- | SC-74, SOT-457 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.52A (Ta) | 1.8V, 4.5V | 120mOhm @ 1A, 4.5V | Surface Mount | 600mV @ 1mA (Typ) | 8.8 nC @ 4.5 V | 12 V | ±8V | 500 pF @ 9.6 V | - | - | 6-TSOP | - | 417mW (Ta) | -55°C ~ 150°C (TJ) |
|
PH2625L,115MOSFET N-CH 25V 100A LFPAK NXP USA Inc. |
5,684 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
BUK7528-55A,127PFET, 42A I(D), 55V, 0.028OHM, 1 NXP USA Inc. |
4,260 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 28mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | - | 55 V | ±20V | 1165 pF @ 25 V | - | - | TO-220AB | - | 99W (Tc) | -55°C ~ 175°C (TJ) |
|
PHD97NQ03LT,118MOSFET N-CH 25V 75A DPAK NXP USA Inc. |
5,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PSMN023-80LS,115MOSFET N-CH 80V 34A 8DFN NXP USA Inc. |
8,649 | - |
|
数据表 |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34A (Tc) | 10V | 23mOhm @ 10A, 10V | Surface Mount | 4V @ 1mA | 21 nC @ 10 V | 80 V | ±20V | 1295 pF @ 40 V | - | - | 8-DFN3333 (3.3x3.3) | - | 65W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PHD108NQ03LT,118MOSFET N-CH 25V 75A DPAK NXP USA Inc. |
8,577 | - |
|
数据表 |
TrenchMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 5V, 10V | 6mOhm @ 25A, 10V | Surface Mount | 2V @ 1mA | 16.3 nC @ 4.5 V | 25 V | ±20V | 1375 pF @ 12 V | - | - | DPAK | - | 187W (Tc) | -55°C ~ 175°C (TJ) |
|
PSMN085-150K,518NEXPERIA PSMN085-150K - 3.5A, 15 NXP Semiconductors |
6,398 | - |
|
数据表 |
TrenchMOS™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 10V | 85mOhm @ 3.5A, 10V | Surface Mount | 4V @ 1mA | 40 nC @ 10 V | 150 V | ±20V | 1310 pF @ 25 V | - | - | 8-SO | - | 3.5W (Tc) | -55°C ~ 150°C (TJ) |
|
BUK7575-55A,127NEXPERIA BUK7575 - N-CHANNEL MO NXP Semiconductors |
4,013 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | Through Hole | 4V @ 1mA | - | 55 V | ±20V | 483 pF @ 25 V | - | - | TO-220AB | - | 62W (Tc) | -55°C ~ 175°C (TJ) |
|
BUK7E13-60E,127MOSFET N-CH 60V 58A I2PAK NXP USA Inc. |
1,470 | - |
|
数据表 |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Ta) | - | 13mOhm @ 15A, 10V | Through Hole | 4V @ 1mA | 22.9 nC @ 10 V | 60 V | ±20V | 1730 pF @ 25 V | AEC-Q101 | - | I2PAK | Automotive | 96W (Ta) | -55°C ~ 175°C (TJ) |
