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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK951R9-40E,127

BUK951R9-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.

4,362 -
BUK951R9-40E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 120 nC @ 5 V 40 V ±10V 16400 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK952R8-60E,127

BUK952R8-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.

8,276 -
BUK952R8-60E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 120 nC @ 5 V 60 V ±10V 17450 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK953R2-40E,127

BUK953R2-40E,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.

2,296 -
BUK953R2-40E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 69.5 nC @ 5 V 40 V ±10V 9150 pF @ 25 V - - TO-220AB - 234W (Tc) -55°C ~ 175°C (TJ)
BUK954R4-80E,127

BUK954R4-80E,127

MOSFET N-CH 80V 120A TO220AB

NXP USA Inc.

2,375 -
BUK954R4-80E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 123 nC @ 5 V 80 V ±10V 17130 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK956R1-100E,127

BUK956R1-100E,127

MOSFET N-CH 100V 120A TO220AB

NXP USA Inc.

7,919 -
BUK956R1-100E,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 133 nC @ 5 V 100 V ±10V 17460 pF @ 25 V - - TO-220AB - 349W (Tc) -55°C ~ 175°C (TJ)
BUK9E3R2-40E,127

BUK9E3R2-40E,127

MOSFET N-CH 40V 100A I2PAK

NXP USA Inc.

6,470 -
BUK9E3R2-40E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 69.5 nC @ 5 V 40 V ±10V 9150 pF @ 25 V - - I2PAK - 234W (Tc) -55°C ~ 175°C (TJ)
BUK9E1R8-40E,127

BUK9E1R8-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.

6,383 -
BUK9E1R8-40E,127

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 120 nC @ 5 V 40 V ±10V 16400 pF @ 25 V - - I2PAK - 349W (Tc) -55°C ~ 175°C (TJ)
PSMN4R6-100XS,127

PSMN4R6-100XS,127

MOSFET N-CH 100V 70.4A TO220F

NXP USA Inc.

8,113 -
PSMN4R6-100XS,127

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 70.4A (Tc) 10V 4.6mOhm @ 15A, 10V Through Hole 4V @ 1mA 153 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - TO-220F - 63.8W (Tc) -55°C ~ 175°C (TJ)
PSMN8R5-100XSQ

PSMN8R5-100XSQ

MOSFET N-CH 100V 49A TO220F

NXP USA Inc.

7,154 -
PSMN8R5-100XSQ

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 49A (Tj) 10V 8.5mOhm @ 10A, 10V Through Hole 4V @ 1mA 100 nC @ 10 V 100 V ±20V 5512 pF @ 50 V - - TO-220F - 55W (Tc) -55°C ~ 175°C (TJ)
BUK7C1R2-40EJ

BUK7C1R2-40EJ

MOSFET N-CH 40V D2PAK-7

NXP USA Inc.

6,878 -
BUK7C1R2-40EJ

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 40 V - - - - D2PAK-7 - - -
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