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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PHT8N06LT,135

PHT8N06LT,135

MOSFET N-CH 55V 3.5A SOT223

NXP USA Inc.

5,365 -
PHT8N06LT,135

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 5V 80mOhm @ 5A, 5V Surface Mount 2V @ 1mA 11.2 nC @ 5 V 55 V ±13V 650 pF @ 25 V - - SC-73 - 1.8W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ)
PHX14NQ20T,127

PHX14NQ20T,127

MOSFET N-CH 200V 7.6A TO220F

NXP USA Inc.

6,749 -
PHX14NQ20T,127

数据表

TrenchMOS™ TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 10V 230mOhm @ 7A, 10V Through Hole 4V @ 1mA 38 nC @ 10 V 200 V ±20V 1500 pF @ 25 V - - TO-220F - 30W (Tc) -55°C ~ 150°C (TJ)
PHX18NQ20T,127

PHX18NQ20T,127

MOSFET N-CH 200V 8.2A TO220F

NXP USA Inc.

7,649 -
PHX18NQ20T,127

数据表

TrenchMOS™ TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.2A (Tc) 10V 180mOhm @ 8A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 200 V ±20V 1850 pF @ 25 V - - TO-220F - 30W (Tc) -55°C ~ 150°C (TJ)
PHX23NQ10T,127

PHX23NQ10T,127

MOSFET N-CH 100V 13A TO220F

NXP USA Inc.

8,000 -
PHX23NQ10T,127

数据表

TrenchMOS™ TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 70mOhm @ 13A, 10V Through Hole 4V @ 1mA 22 nC @ 10 V 100 V ±20V 1187 pF @ 25 V - - TO-220F - 27W (Tc) -55°C ~ 150°C (TJ)
PHX9NQ20T,127

PHX9NQ20T,127

MOSFET N-CH 200V 5.2A TO220F

NXP USA Inc.

7,051 -
PHX9NQ20T,127

数据表

TrenchMOS™ TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.2A (Tc) 10V 400mOhm @ 4.5A, 10V Through Hole 4V @ 1mA 24 nC @ 10 V 200 V ±20V 959 pF @ 25 V - - TO-220F - 25W (Tc) -55°C ~ 150°C (TJ)
PSMN003-30B,118

PSMN003-30B,118

MOSFET N-CH 30V 75A D2PAK

NXP USA Inc.

9,256 -
PSMN003-30B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V Surface Mount 3V @ 1mA 170 nC @ 10 V 30 V ±20V 9200 pF @ 25 V - - D2PAK - 230W (Tc) -55°C ~ 175°C (TJ)
2N7000,126

2N7000,126

MOSFET N-CH 60V 300MA TO92-3

NXP USA Inc.

6,342 -
2N7000,126

数据表

TrenchMOS™ TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V Through Hole 2V @ 1mA - 60 V ±30V 40 pF @ 10 V - - TO-92-3 - 830mW (Ta) -55°C ~ 150°C (TJ)
PH5525L,115

PH5525L,115

MOSFET N-CH 25V 81.7A LFPAK56

NXP USA Inc.

9,825 -
PH5525L,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 81.7A (Tc) 4.5V, 10V 5.5mOhm @ 25A, 10V Surface Mount 2.15V @ 1mA 16.6 nC @ 4.5 V 25 V ±20V 2150 pF @ 12 V - - LFPAK56, Power-SO8 - 62.5W (Tc) -55°C ~ 150°C (TJ)
PMN23UN,165

PMN23UN,165

MOSFET N-CH 20V 6.3A 6TSOP

NXP USA Inc.

7,780 -
PMN23UN,165

数据表

TrenchMOS™ SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.3A (Tc) 1.8V, 4.5V 28mOhm @ 2A, 4.5V Surface Mount 700mV @ 1mA (Typ) 10.6 nC @ 4.5 V 20 V ±8V 740 pF @ 10 V - - SC-74 - 1.75W (Tc) -55°C ~ 150°C (TJ)
PH9025L,115

PH9025L,115

MOSFET N-CH 25V 66A LFPAK56

NXP USA Inc.

3,857 -
PH9025L,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 66A (Tc) 4.5V, 10V 9mOhm @ 10A, 10V Surface Mount 2.15V @ 1mA 12.8 nC @ 4.5 V 25 V ±20V 1414 pF @ 30 V - - LFPAK56, Power-SO8 - 62.5W (Tc) -55°C ~ 150°C (TJ)
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