NXP Semiconductors|场效应晶体管（FETs）、MOSFETs - 页 31

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
PSMN009-100P,127 NEXPERIA PSMN009-100P - 75A, 100 NXP Semiconductors	291	-	询价单	数据表	TrenchMOS™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	8.8mOhm @ 25A, 10V	Through Hole	4V @ 1mA	156 nC @ 10 V	100 V	±20V	8250 pF @ 25 V	-	-	TO-220AB	-	230W (Tc)	-55°C ~ 175°C (TJ)
PSMN2R6-60PSQ NOW NEXPERIA PSMN2R6-60PSQ - 150 NXP USA Inc.	266	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	10V	2.6mOhm @ 25A, 10V	Through Hole	4V @ 1mA	140 nC @ 10 V	60 V	±20V	7629 pF @ 25 V	-	-	TO-220AB	-	326W (Tc)	-55°C ~ 175°C (TJ)
PSMN4R3-80PS,127 NEXPERIA PSMN4R3-80PS - 120A, 80 NXP Semiconductors	1,756	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.3mOhm @ 25A, 10V	Through Hole	4V @ 1mA	111 nC @ 10 V	80 V	±20V	8161 pF @ 40 V	-	-	TO-220AB	-	306W (Tc)	-55°C ~ 175°C (TJ)
BUK7107-55AIE,118 NEXPERIA BUK7107 - N-CHANNEL TRE NXP Semiconductors	2,400	-	询价单	数据表	TrenchMOS™	TO-263-5, D2PAK (4 Leads + Tab), TO-263BB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	7mOhm @ 50A, 10V	Surface Mount	4V @ 1mA	116 nC @ 10 V	55 V	±20V	4500 pF @ 25 V	AEC-Q101	Current Sensing	D2PAK	Automotive	272W (Tc)	-55°C ~ 175°C (TJ)
PSMN6R3-120PS PSMN6R3-120PS - N-CHANNEL 120V S NXP Semiconductors	319	-	询价单	数据表	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Ta)	10V	6.7mOhm @ 25A, 10V	Through Hole	4V @ 1mA	207.1 nC @ 10 V	120 V	±20V	11384 pF @ 60 V	-	-	TO-220AB	-	405W (Ta)	-55°C ~ 175°C (TJ)
BS108,126 MOSFET N-CH 200V 300MA TO92-3 NXP USA Inc.	6,039	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300mA (Ta)	2.8V	5Ohm @ 100mA, 2.8V	Through Hole	1.8V @ 1mA	-	200 V	±20V	120 pF @ 25 V	-	-	TO-92-3	-	1W (Ta)	-55°C ~ 150°C (TJ)
BS108/01,126 MOSFET N-CH 200V 300MA TO92-3 NXP USA Inc.	6,376	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300mA (Ta)	2.8V	5Ohm @ 100mA, 2.8V	Through Hole	1.8V @ 1mA	-	200 V	±20V	120 pF @ 25 V	-	-	TO-92-3	-	1W (Ta)	-55°C ~ 150°C (TJ)
BSN254,126 MOSFET N-CH 250V 310MA TO92-3 NXP USA Inc.	7,164	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	N-Channel	MOSFET (Metal Oxide)	310mA (Ta)	2.4V, 10V	5Ohm @ 300mA, 10V	Through Hole	2V @ 1mA	-	250 V	±20V	120 pF @ 25 V	-	-	TO-92-3	-	1W (Ta)	-55°C ~ 150°C (TJ)
BSN254A,126 MOSFET N-CH 250V 310MA TO92-3 NXP USA Inc.	8,748	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	N-Channel	MOSFET (Metal Oxide)	310mA (Ta)	2.4V, 10V	5Ohm @ 300mA, 10V	Through Hole	2V @ 1mA	-	250 V	±20V	120 pF @ 25 V	-	-	TO-92-3	-	1W (Ta)	-55°C ~ 150°C (TJ)
BSN304,126 MOSFET N-CH 300V 300MA TO92-3 NXP USA Inc.	4,249	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300mA (Ta)	2.4V, 10V	6Ohm @ 250mA, 10V	Through Hole	2V @ 1mA	-	300 V	±20V	120 pF @ 25 V	-	-	TO-92-3	-	1W (Ta)	-55°C ~ 150°C (TJ)

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