Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TP0606N3-G-P003 MOSFET P-CH 60V 320MA TO92-3 Microchip Technology	4,320	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	320mA (Tj)	5V, 10V	3.5Ohm @ 750mA, 10V	Through Hole	2.4V @ 1mA	-	60 V	±20V	150 pF @ 25 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
TP0606N3-G-P002 MOSFET P-CH 60V 320MA TO92-3 Microchip Technology	2,835	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	320mA (Tj)	5V, 10V	3.5Ohm @ 750mA, 10V	Through Hole	2.4V @ 1mA	-	60 V	±20V	150 pF @ 25 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
TN0104N3-G-P003 MOSFET N-CH 40V 450MA TO92-3 Microchip Technology	2,981	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	450mA (Ta)	3V, 10V	1.8Ohm @ 1A, 10V	Through Hole	1.6V @ 500µA	-	40 V	±20V	70 pF @ 20 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
VN2410L-G-P013 MOSFET N-CH 240V 190MA TO92-3 Microchip Technology	2,687	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	190mA (Tj)	2.5V, 10V	10Ohm @ 500mA, 10V	Through Hole	2V @ 1mA	-	240 V	±20V	125 pF @ 25 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
VN2410L-G-P014 MOSFET N-CH 240V 190MA TO92-3 Microchip Technology	2,492	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	190mA (Tj)	2.5V, 10V	10Ohm @ 500mA, 10V	Through Hole	2V @ 1mA	-	240 V	±20V	125 pF @ 25 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
TN0104N3-G-P014 MOSFET N-CH 40V 450MA TO92-3 Microchip Technology	2,526	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	450mA (Ta)	3V, 10V	1.8Ohm @ 1A, 10V	Through Hole	1.6V @ 500µA	-	40 V	±20V	70 pF @ 20 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
APT4F120S MOSFET N-CH 1200V 4A D3PAK Microchip Technology	128	-	询价单	数据表	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	4.2Ohm @ 2A, 10V	Surface Mount	5V @ 500µA	43 nC @ 10 V	1200 V	±30V	1385 pF @ 25 V	-	-	D3PAK	-	175W (Tc)	-
MSC360SMA120SCT/R MOSFET SIC 1200 V 360 MOHM PSMT Microchip Technology	1,300	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	11A (Tc)	20V	450mOhm @ 5A, 20V	Surface Mount	3.14V @ 250µA	21 nC @ 20 V	1200 V	+23V, -10V	255 pF @ 1000 V	-	-	TO-268	-	71W (Tc)	-55°C ~ 175°C (TJ)
MSC360SMA120SDT/R MOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology	795	-	询价单	数据表	mSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	12A (Tc)	18V, 20V	450mOhm @ 5A, 20V	Surface Mount	5V @ 250µA	21 nC @ 20 V	1200 V	+23V, -10V	258 pF @ 1.2 kV	-	-	TO-263-7	-	92W (Tc)	-55°C ~ 175°C (TJ)
TP2424N8-G MOSFET P-CH 240V 316MA TO243AA Microchip Technology	4,732	-	询价单	数据表	-	TO-243AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	316mA (Tj)	4.5V, 10V	8Ohm @ 500mA, 10V	Surface Mount	2.4V @ 1mA	-	240 V	±20V	200 pF @ 25 V	-	-	TO-243AA (SOT-89)	-	1.6W (Ta)	-55°C ~ 150°C (TJ)

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