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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TN5325N3-G-P002

TN5325N3-G-P002

MOSFET N-CH 250V 215MA TO92-3

Microchip Technology

5,608 -
TN5325N3-G-P002

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 215mA (Ta) 4.5V, 10V 7Ohm @ 1A, 10V Through Hole 2V @ 1mA - 250 V ±20V 110 pF @ 25 V - - TO-92-3 - 740mW (Ta) -
TP5322N8-G

TP5322N8-G

MOSFET P-CH 220V 260MA TO243AA

Microchip Technology

7,777 -
TP5322N8-G

数据表

- TO-243AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 260mA (Tj) 4.5V, 10V 12Ohm @ 200mA, 10V Surface Mount 2.4V @ 1mA - 220 V ±20V 110 pF @ 25 V - - TO-243AA (SOT-89) - 1.6W (Ta) -55°C ~ 150°C (TJ)
LND150N3-G-P002

LND150N3-G-P002

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology

1,829 -
LND150N3-G-P002

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 30mA (Tj) 0V 1000Ohm @ 500µA, 0V Through Hole - - 500 V ±20V 10 pF @ 25 V - - TO-92-3 - 740mW (Ta) -55°C ~ 150°C (TJ)
VN0104N3-G-P013

VN0104N3-G-P013

MOSFET N-CH 40V 350MA TO92-3

Microchip Technology

5,890 -
VN0104N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V Through Hole 2.4V @ 1mA - 40 V ±20V 65 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
VN0106N3-G-P003

VN0106N3-G-P003

MOSFET N-CH 60V 350MA TO92-3

Microchip Technology

8,899 -
VN0106N3-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V Through Hole 2.4V @ 1mA - 60 V ±20V 65 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
DN2535N3-G-P013

DN2535N3-G-P013

MOSFET N-CH 350V 120MA TO92

Microchip Technology

3,998 -
DN2535N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 120mA (Tj) 0V 25Ohm @ 120mA, 0V Through Hole - - 350 V ±20V 300 pF @ 25 V - - TO-92 (TO-226) - 1W (Tc) -55°C ~ 150°C (TJ)
MIC94030YM4-TR

MIC94030YM4-TR

MOSFET P-CH 16V 1A SOT-143

Microchip Technology

6,840 -
MIC94030YM4-TR

数据表

TinyFET® TO-253-4, TO-253AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1A (Ta) 2.7V, 10V 450mOhm @ 100mA, 10V Surface Mount 1.4V @ 250µA - 16 V 16V 100 pF @ 12 V - - SOT-143 - 568mW (Ta) -55°C ~ 150°C (TJ)
TN2640LG-G

TN2640LG-G

MOSFET N-CH 400V 260MA 8SOIC

Microchip Technology

2,593 -
TN2640LG-G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 260mA (Tj) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 2V @ 2mA - 400 V ±20V 225 pF @ 25 V - - 8-SOIC - 1.3W (Ta) -55°C ~ 150°C (TJ)
MCP87030T-U/MF

MCP87030T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Microchip Technology

6,274 -
MCP87030T-U/MF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V Surface Mount 1.6V @ 250µA 22 nC @ 4.5 V 25 V +10V, -8V 1635 pF @ 12.5 V - - 8-PDFN (5x6) - 2.2W (Ta) -55°C ~ 150°C (TJ)
TN0106N3-G-P013

TN0106N3-G-P013

MOSFET N-CH 60V 350MA TO92-3

Microchip Technology

5,218 -
TN0106N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 350mA (Tj) 4.5V, 10V 3Ohm @ 500mA, 10V Through Hole 2V @ 500µA - 60 V ±20V 60 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
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