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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT5017BVRG

APT5017BVRG

MOSFET N-CH 500V 30A TO247

Microchip Technology

243 -
APT5017BVRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) - 170mOhm @ 500mA, 10V Through Hole 4V @ 1mA 300 nC @ 10 V 500 V - 5280 pF @ 25 V - - TO-247 [B] - - -
TN0604N3-G-P005

TN0604N3-G-P005

MOSFET N-CH 40V 700MA TO92-3

Microchip Technology

7,078 -
TN0604N3-G-P005

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V Through Hole 1.6V @ 1mA - 40 V ±20V 190 pF @ 20 V - - TO-92-3 - 740mW (Ta) -55°C ~ 150°C (TJ)
TN0604N3-G-P013

TN0604N3-G-P013

MOSFET N-CH 40V 700MA TO92-3

Microchip Technology

4,762 -
TN0604N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V Through Hole 1.6V @ 1mA - 40 V ±20V 190 pF @ 20 V - - TO-92-3 - 740mW (Ta) -55°C ~ 150°C (TJ)
APT1201R2BFLLG

APT1201R2BFLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology

274 -
APT1201R2BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) - 1.25Ohm @ 6A, 10V Through Hole 5V @ 1mA 100 nC @ 10 V 1200 V - 2540 pF @ 25 V - - TO-247 [B] - - -
APT60M75L2FLLG

APT60M75L2FLLG

MOSFET N-CH 600V 73A 264 MAX

Microchip Technology

82 -
APT60M75L2FLLG

数据表

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 73A (Tc) 10V 75mOhm @ 36.5A, 10V Through Hole 5V @ 5mA 195 nC @ 10 V 600 V ±30V 8930 pF @ 25 V - - 264 MAX™ [L2] - 893W (Tc) -55°C ~ 150°C (TJ)
APL502B2G

APL502B2G

MOSFET N-CH 500V 58A T-MAX

Microchip Technology

106 -
APL502B2G

数据表

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 15V 90mOhm @ 29A, 12V Through Hole 4V @ 2.5mA - 500 V ±30V 9000 pF @ 25 V - - T-MAX™ [B2] - 730W (Tc) -55°C ~ 150°C (TJ)
VN2460N3-G-P003

VN2460N3-G-P003

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology

3,181 -
VN2460N3-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V Through Hole 4V @ 2mA - 600 V ±20V 150 pF @ 25 V - - TO-92-3 - 1W (Ta) -55°C ~ 150°C (TJ)
VN0606L-G-P003

VN0606L-G-P003

MOSFET N-CH 60V 330MA TO92-3

Microchip Technology

3,966 -
VN0606L-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 330mA (Tj) 10V 3Ohm @ 1A, 10V Through Hole 2V @ 1mA - 60 V ±30V 50 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
VN2460N3-G-P014

VN2460N3-G-P014

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology

3,222 -
VN2460N3-G-P014

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V Through Hole 4V @ 2mA - 600 V ±20V 150 pF @ 25 V - - TO-92-3 - 1W (Ta) -55°C ~ 150°C (TJ)
TN2501N8-G

TN2501N8-G

MOSFET N-CH 18V 400MA TO243AA

Microchip Technology

7,420 -
TN2501N8-G

数据表

- TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400mA (Tj) 1.2V, 3V 2.5Ohm @ 200mA, 3V Surface Mount 1V @ 1mA - 18 V ±20V 110 pF @ 15 V - - TO-243AA (SOT-89) - 1.6W (Tc) -55°C ~ 150°C (TJ)
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