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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC400SMA330B4NMOSFET SIC 3300V 400 MOHM TO-247 Microchip Technology |
8,045 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 11A (Tc) | 20V | 520mOhm @ 5A, 20V | Through Hole | 2.97V @ 1mA | 37 nC @ 20 V | 3300 V | +23V, -10V | 579 pF @ 2.4 kV | - | - | TO-247-4 | - | 131W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC011SMC120D/SMOSFET SIC 1200 V 11 MOHM DIE Microchip Technology |
7,006 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC011SMB120SDT/RMOSFET SIC 1200 V 11 MOHM, 7LD T Microchip Technology |
8,897 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC080SMB120D/SMOSFET SIC 1200 V 80 MOHM DIE Microchip Technology |
5,464 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC040SMA120SDT/RMOSFET SIC 1200 V 40 MOHM TO-263 Microchip Technology |
6,632 | - |
|
数据表 |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 68A (Tc) | 18V, 20V | 50mOhm @ 40A, 20V | Surface Mount | 2.7V @ 2mA | 137 nC @ 20 V | 1200 V | +23V, -10V | 1962 pF @ 1000 V | - | - | TO-268 | - | 338W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MSC011SMB120D/SMOSFET SIC 1200 V 11 MOHM DIE Microchip Technology |
6,768 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC060SMB120D/SMOSFET SIC 1200 V 60 MOHM DIE Microchip Technology |
3,943 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC040SMB120D/SMOSFET SIC 1200 V 40 MOHM DIE Microchip Technology |
5,413 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC025SMB120D/SMOSFET SIC 1200 V 25 MOHM DIE Microchip Technology |
5,237 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC080SMA330B4NMOSFET SIC 3300V 80 MOHM TO-247- Microchip Technology |
7,947 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 41A (Tc) | 20V | 105mOhm @ 30A, 20V | Through Hole | 2.97V @ 3mA | 55 nC @ 20 V | 3300 V | +23V, -10V | 3462 pF @ 2.4 kV | - | - | TO-247-4 | - | 381W (Tc) | -55°C ~ 150°C (TJ) |
