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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TN2130K1-G-VAOMOSFET N-CH 300V 85MA SOT23-3 Microchip Technology |
7,914 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | Surface Mount | 2.4V @ 1mA | - | 300 V | ±20V | 50 pF @ 25 V | - | - | SOT-23-3 | - | 360mW (Ta) | -55°C ~ 150°C (TA) |
|
|
TP5335K1-G-VAOMOSFET P-CH 350V 85MA SOT23-3 Microchip Technology |
6,071 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | Surface Mount | 2.4V @ 1mA | - | 350 V | ±20V | 110 pF @ 25 V | - | - | SOT-23-3 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology |
2,602 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | Surface Mount | 2.8V @ 1mA | 64 nC @ 20 V | 1200 V | +23V, -10V | 838 pF @ 1000 V | - | - | TO-263-7 | - | 182W (Tc) | -55°C ~ 175°C (TJ) |
|
MIC94031YM4-TRMOSFET P-CH 16V 1A SOT-143 Microchip Technology |
8,050 | - |
|
数据表 |
TinyFET® | TO-253-4, TO-253AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | Surface Mount | 1.4V @ 250µA | - | 16 V | 16V | 100 pF @ 12 V | - | - | SOT-143 | - | 568mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
MSC025SMA330B4MOSFET SIC 3300 V 25 MOHM TO-247 Microchip Technology |
5,810 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 104A (Tc) | 20V | 31mOhm @ 40A, 20V | Through Hole | 2.7V @ 7mA | 410 nC @ 20 V | 3300 V | +23V, -10V | 8720 pF @ 2640 V | - | - | TO-247-4 | - | - | -55°C ~ 150°C (TJ) |
|
|
MRH25N12U3RH MOSFET _ U3 Microchip Technology |
9,298 | - |
|
数据表 |
- | 3-SMD, No Lead | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12.4A (Tc) | 12V | 210mOhm @ 7.5A, 12V | Surface Mount | 4V @ 1mA | 50 nC @ 12 V | 250 V | ±20V | 1980 pF @ 25 V | - | - | U3 (SMD-0.5) | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC035SMA070JMOSFET SIC 700 V 35 MOHM SOT-227 Microchip Technology |
9,150 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Box | Active | N-Channel | SiCFET (Silicon Carbide) | - | - | - | Chassis Mount | - | - | 700 V | - | - | - | - | SOT-227 (ISOTOP®) | - | - | - |
|
|
MSC015SMA070JMOSFET SIC 700 V 15 MOHM SOT-227 Microchip Technology |
5,113 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Box | Active | N-Channel | SiCFET (Silicon Carbide) | - | - | - | Chassis Mount | - | - | 700 V | - | - | - | - | SOT-227 (ISOTOP®) | - | - | - |
|
|
TN2130MF-G-VAOMOSFET, N-CHANNEL ENHANCEMENT-MO Microchip Technology |
9,470 | - |
|
数据表 |
- | 6-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | Surface Mount | 2.4V @ 1mA | - | 300 V | ±20V | 50 pF @ 25 V | - | - | 6-DFN (2x2) | - | 360mW (Ta) | -55°C ~ 150°C (TA) |
|
|
TP5335MF-G-VAOMOSFET, P-CHANNEL ENHANCEMENT-MO Microchip Technology |
7,163 | - |
|
数据表 |
- | 6-VDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | Surface Mount | 2.4V @ 1mA | - | 350 V | ±20V | 110 pF @ 25 V | AEC-Q100 | - | 6-DFN (2x2) | Automotive | 360mW (Ta) | -55°C ~ 150°C (TJ) |
