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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC360SMA120BMOSFET SIC 1200 V 360 MOHM TO-24 Microchip Technology |
130 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | Through Hole | 3.14V @ 500µA (Typ) | 21 nC @ 20 V | 1200 V | +23V, -10V | 255 pF @ 1000 V | - | - | TO-247-3 | - | 78W (Tc) | -55°C ~ 175°C (TJ) |
|
MSC180SMA120SDT/RMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology |
773 | - |
|
数据表 |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 21A (Tc) | 18V, 20V | 225mOhm @ 8A, 20V | Surface Mount | 5V @ 500µA | 36 nC @ 20 V | 1200 V | +23V, -10V | 481 pF @ 1.2 kV | - | - | TO-263-7 | - | 146W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MSC090SMA070SCT/RMOSFET SIC 700 V 90 MOHM PSMT Microchip Technology |
1,300 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC090SMA070SDT/RMOSFET SIC 700 V 90 MOHM TO-263- Microchip Technology |
800 | - |
|
数据表 |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tc) | 18V, 20V | 112mOhm @ 15A, 20V | Surface Mount | 5V @ 750µA | 41 nC @ 20 V | 700 V | +23V, -10V | 806 pF @ 700 V | - | - | TO-263-7 | - | 156W (Tc) | -55°C ~ 175°C (TJ) |
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|
TN0610N3-G-P003MOSFET N-CH 100V 500MA TO92-3 Microchip Technology |
3,349 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | Through Hole | 2V @ 1mA | - | 100 V | ±20V | 150 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TN0610N3-G-P013MOSFET N-CH 100V 500MA TO92-3 Microchip Technology |
3,397 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | Through Hole | 2V @ 1mA | - | 100 V | ±20V | 150 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC060SMA070SCT/RMOSFET SIC 700 V 60 MOHM PSMT Microchip Technology |
1,300 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC060SMA070SDT/RMOSFET SIC 700 V 60 MOHM TO-263- Microchip Technology |
790 | - |
|
数据表 |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 51A (Tc) | 18V, 20V | 75mOhm @ 20A, 20V | Surface Mount | 5V @ 1mA | 56 nC @ 20 V | 700 V | +23V, -10V | 1160 pF @ 700 V | - | - | TO-263-7 | - | 240W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MSC080SMA120SCT/RMOSFET SIC 1200 V 80 MOHM PSMT Microchip Technology |
1,300 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC080SMA120SDT/RMOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology |
800 | - |
|
数据表 |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | Surface Mount | 2.8V @ 1mA | 64 nC @ 20 V | 1200 V | +23V, -10V | 838 pF @ 1000 V | - | - | TO-268 | - | 182W (Tc) | -55°C ~ 175°C (TJ) |
