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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANSR2N7584T1RH MOSFET 200V TO-254AA Microchip Technology |
7,903 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CD-MSCSM70XM19CTYZBNMGST-MOSFET-SIC-SBD-6HPD Microchip Technology |
5,041 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APL602LG-1MOSFET LINEAR 600 V 49 A TO-264 Microchip Technology |
6,828 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | Through Hole | 4V @ 2.5mA | - | 600 V | ±30V | 9000 pF @ 25 V | - | - | TO-264 (L) | - | 730W | -55°C ~ 150°C (TJ) |
|
|
APT80GA90B2D40MOSFET N-CH 800V 34A T-MAX Microchip Technology |
2,937 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC035SMA070SCT/RMOSFET SIC 700 V 35 MOHM PSMT Microchip Technology |
8,820 | - |
|
数据表 |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 71A (Tc) | 18V, 20V | 44mOhm @ 30A, 20V | Surface Mount | 5V @ 2mA | 93 nC @ 20 V | 700 V | +23V, -10V | 1806 pF @ 700 V | - | - | TO-268 | - | 276W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MSC020SMB120D/SMOSFET SIC 1200 V 20 MOHM DIE Microchip Technology |
3,121 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC045SMB120D/SMOSFET SIC 1200 V 45 MOHM DIE Microchip Technology |
3,148 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC025SMA330B4NMOSFET SIC 3300V 25 MOHM TO-247- Microchip Technology |
4,377 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 104A | - | - | Through Hole | - | - | 3300 V | - | - | - | - | TO-247-4 | - | - | -55°C ~ 150°C (TJ) |
|
|
MSC025SMA120SCT/RMOSFET SIC 1200 V 25 MOHM PSMT Microchip Technology |
2,441 | - |
|
数据表 |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 108A (Tc) | 18V, 20V | 31mOhm @ 40A, 20V | Surface Mount | 3V @ 3mA | 232 nC @ 20 V | 1200 V | +23V, -10V | 3633 pF @ 1000 V | - | - | TO-268 | - | 524W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MSC030SMB120D/SMOSFET SIC 1200 V 30 MOHM DIE Microchip Technology |
5,073 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
