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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC011SMC120B4NMOSFET SIC 1200 V 11 MOHM TO-247 Microchip Technology |
5,581 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT7F120SMOSFET N-CH 1200V 7A D3PAK Microchip Technology |
240 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 2.4Ohm @ 3A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 1200 V | ±30V | 2565 pF @ 25 V | - | - | D3PAK | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC020SMB120B4NMOSFET SIC 1200 V 20 MOHM TO-247 Microchip Technology |
8,379 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC020SMB120SDT/RMOSFET SIC 1200 V 20 MOHM, 7LD T Microchip Technology |
7,153 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC080SMB120SDT/RMOSFET SIC 1200 V 80 MOHM, 7LD T Microchip Technology |
8,627 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC090SMA070SSICFET N-CH 700V D3PAK Microchip Technology |
103 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 25A (Tc) | - | - | Surface Mount | - | - | 700 V | - | - | - | - | D3PAK | - | - | -55°C ~ 175°C (TJ) |
|
MSC180SMA120BMOSFET 1200V 25A TO-247 Microchip Technology |
105 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 5V, 20V | 225mOhm @ 8A, 20V | Through Hole | 4.5V @ 500µA | 36 nC @ 20 V | 1200 V | +23V, -10V | 530 pF @ 1000 V | - | - | TO-247-3 | - | 147W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MSC040SMA120S/TRMOSFET SIC 1200 V 40 MOHM TO-268 Microchip Technology |
397 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | Surface Mount | 2.6V @ 2mA | 137 nC @ 20 V | 1200 V | +23V, -10V | 1990 pF @ 1000 V | - | - | TO-268 | - | 303W (Tc) | -55°C ~ 175°C (TJ) |
|
APTM100UM45DAGMOSFET N-CH 1000V 215A SP6 Microchip Technology |
34 | - |
|
数据表 |
POWER MOS 7® | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 215A (Tc) | 10V | 52mOhm @ 107.5A, 10V | Chassis Mount | 5V @ 30mA | 1602 nC @ 10 V | 1000 V | ±30V | 42700 pF @ 25 V | - | - | SP6 | - | 5000W (Tc) | -40°C ~ 150°C (TJ) |
|
MCP87050T-U/MFMOSFET N-CH 25V 100A 8PDFN Microchip Technology |
2,896 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | Surface Mount | 1.6V @ 250µA | 15 nC @ 4.5 V | 25 V | +10V, -8V | 1040 pF @ 12.5 V | - | - | 8-PDFN (5x6) | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) |
