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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
LND150N3-G-P013MOSFET N-CH 500V 30MA TO92-3 Microchip Technology |
8,045 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | Through Hole | - | - | 500 V | ±20V | 10 pF @ 25 V | - | - | TO-92-3 | - | 740mW (Ta) | -55°C ~ 150°C (TJ) |
|
MIC94031BM4 TRMOSFET P-CH 16V 1A SOT-143 Microchip Technology |
8,484 | - |
|
数据表 |
TinyFET® | TO-253-4, TO-253AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | Surface Mount | 1.4V @ 250µA | - | 16 V | 16V | 100 pF @ 12 V | - | - | SOT-143 | - | 568mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
MIC94030BM4 TRMOSFET P-CH 16V 1A SOT-143 Microchip Technology |
8,974 | - |
|
数据表 |
TinyFET® | TO-253-4, TO-253AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | Surface Mount | 1.4V @ 250µA | - | 16 V | 16V | 100 pF @ 12 V | - | - | SOT-143 | - | 568mW (Ta) | -55°C ~ 150°C (TJ) |
|
MCP87055T-U/LCMOSFET N-CH 25V 60A 8PDFN Microchip Technology |
4,368 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | Surface Mount | 1.7V @ 250µA | 14 nC @ 4.5 V | 25 V | +10V, -8V | 890 pF @ 12.5 V | - | - | 8-PDFN (3.3x3.3) | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
|
VN10KN3-G-P003MOSFET N-CH 60V 310MA TO92-3 Microchip Technology |
7,293 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | Through Hole | 2.5V @ 1mA | - | 60 V | ±30V | 60 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
VN10KN3-G-P013MOSFET N-CH 60V 310MA TO92-3 Microchip Technology |
5,363 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | Through Hole | 2.5V @ 1mA | - | 60 V | ±30V | 60 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
VN10KN3-G-P014MOSFET N-CH 60V 310MA TO92-3 Microchip Technology |
2,934 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | N-Channel | MOSFET (Metal Oxide) | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | Through Hole | 2.5V @ 1mA | - | 60 V | ±30V | 60 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
APT9M100S/TRMOSFET MOS8 1000 V 9 A TO-268 Microchip Technology |
324 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2605 pF @ 25 V | - | - | D3PAK | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC080SMB120B4NMOSFET SIC 1200 V 80 MOHM TO-247 Microchip Technology |
8,099 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC011SMB120B4NMOSFET SIC 1200 V 11 MOHM TO-247 Microchip Technology |
3,176 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
