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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT20M11JVR

APT20M11JVR

MOSFET N-CH 200V 175A ISOTOP

Microchip Technology

6 -
APT20M11JVR

数据表

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 175A (Tc) 10V 11mOhm @ 500mA, 10V Chassis Mount 4V @ 5mA 180 nC @ 10 V 200 V ±30V 21600 pF @ 25 V - - ISOTOP® - 700W (Tc) -55°C ~ 150°C (TJ)
APT10025JVR

APT10025JVR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology

10 -
APT10025JVR

数据表

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 34A (Tc) - 250mOhm @ 500mA, 10V Chassis Mount 4V @ 5mA 990 nC @ 10 V 1000 V - 18000 pF @ 25 V - - ISOTOP® - - -
APT8011JLL

APT8011JLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology

8 -
APT8011JLL

数据表

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 51A (Tc) - 110mOhm @ 25.5A, 10V Chassis Mount 5V @ 5mA 650 nC @ 10 V 800 V - 9480 pF @ 25 V - - ISOTOP® - - -
APT60M60JLL

APT60M60JLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology

10 -
APT60M60JLL

数据表

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 60mOhm @ 35A, 10V Chassis Mount 5V @ 5mA 289 nC @ 10 V 600 V ±30V 12630 pF @ 25 V - - ISOTOP® - 694W (Tc) -55°C ~ 150°C (TJ)
APT8011JFLL

APT8011JFLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology

10 -
APT8011JFLL

数据表

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 51A (Tc) - 125mOhm @ 25.5A, 10V Chassis Mount 5V @ 5mA 650 nC @ 10 V 800 V - 9480 pF @ 25 V - - ISOTOP® - - -
APT40N60JCU3

APT40N60JCU3

MOSFET N-CH 600V 40A SOT227

Microchip Technology

2,706 -
APT40N60JCU3

数据表

- SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 70mOhm @ 20A, 10V Chassis Mount 3.9V @ 1mA 259 nC @ 10 V 600 V ±20V 7015 pF @ 25 V - - SOT-227 - 290W (Tc) -55°C ~ 150°C (TJ)
APT11N80BC3G

APT11N80BC3G

MOSFET N-CH 800V 11A TO247

Microchip Technology

88 -
APT11N80BC3G

数据表

- TO-247-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 450mOhm @ 7.1A, 10V Through Hole 3.9V @ 680µA 60 nC @ 10 V 800 V ±20V 1585 pF @ 25 V - - TO-247 [B] - 156W (Tc) -55°C ~ 150°C (TJ)
APT7F120B

APT7F120B

MOSFET N-CH 1200V 7A TO247

Microchip Technology

44 -
APT7F120B

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 2.9Ohm @ 3A, 10V Through Hole 5V @ 1mA 80 nC @ 10 V 1200 V ±30V 2565 pF @ 25 V - - TO-247 [B] - 335W (Tc) -55°C ~ 150°C (TJ)
APT43M60L

APT43M60L

MOSFET N-CH 600V 45A TO264

Microchip Technology

20 -
APT43M60L

数据表

POWER MOS 8™ TO-264-3, TO-264AA Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 150mOhm @ 21A, 10V Through Hole 5V @ 2.5mA 215 nC @ 10 V 600 V ±30V 8590 pF @ 25 V - - TO-264 [L] - 780W (Tc) -55°C ~ 150°C (TJ)
APT34F60B

APT34F60B

MOSFET N-CH 600V 36A TO247

Microchip Technology

9 -
APT34F60B

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 210mOhm @ 17A, 10V Through Hole 5V @ 1mA 165 nC @ 10 V 600 V ±30V 6640 pF @ 25 V - - TO-247 [B] - 624W (Tc) -55°C ~ 150°C (TJ)
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