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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC100SM70JCU3SICFET N-CH 700V 124A SOT227 Microchip Technology |
14 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | Chassis Mount | 2.4V @ 4mA | 215 nC @ 20 V | 700 V | +25V, -10V | 4500 pF @ 700 V | - | - | SOT-227 (ISOTOP®) | - | 365W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC70SM120JCU2SICFET N-CH 1.2KV 89A SOT227 Microchip Technology |
24 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | Chassis Mount | 2.8V @ 1mA | 232 nC @ 20 V | 1200 V | +25V, -10V | 3020 pF @ 1000 V | - | - | SOT-227 (ISOTOP®) | - | 395W (Tc) | -55°C ~ 150°C (TJ) |
|
APT50M50JVFRMOSFET N-CH 500V 77A ISOTOP Microchip Technology |
6 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 77A (Tc) | - | 50mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 1000 nC @ 10 V | 500 V | - | 19600 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
|
MSC130SM120JCU3SICFET N-CH 1.2KV 173A SOT227 Microchip Technology |
18 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | Chassis Mount | 2.8V @ 2mA | 464 nC @ 20 V | 1200 V | +25V, -10V | 6040 pF @ 1000 V | - | - | SOT-227 (ISOTOP®) | - | 745W (Tc) | -55°C ~ 150°C (TJ) |
|
MSCSM120DAM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 Microchip Technology |
23 | - |
|
数据表 |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 79A | 20V | 31mOhm @ 40A, 20V | Chassis Mount | 2.8V @ 1mA | 232 nC @ 20 V | 1200 V | +25V, -10V | 3020 pF @ 1000 V | - | - | - | - | 310W | -55°C ~ 175°C (TJ) |
|
MSC060SMA070B4TRANS SJT N-CH 700V 39A TO247-4 Microchip Technology |
50 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 39A (Tc) | 20V | 75mOhm @ 20A, 20V | Through Hole | 2.4V @ 1mA | 56 nC @ 20 V | 700 V | +23V, -10V | 1175 pF @ 700 V | - | - | TO-247-4 | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
|
APT14M120SMOSFET N-CH 1200V 14A D3PAK Microchip Technology |
47 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 1.1Ohm @ 7A, 10V | Surface Mount | 5V @ 1mA | 145 nC @ 10 V | 1200 V | ±30V | 4765 pF @ 25 V | - | - | D3PAK | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
APT6029BLLGMOSFET N-CH 600V 21A TO247 Microchip Technology |
63 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | - | 290mOhm @ 10.5A, 10V | Through Hole | 5V @ 1mA | 65 nC @ 10 V | 600 V | - | 2615 pF @ 25 V | - | - | TO-247 [B] | - | 300W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT34M60SMOSFET N-CH 600V 36A D3PAK Microchip Technology |
46 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | Surface Mount | 5V @ 1mA | 165 nC @ 10 V | 600 V | ±30V | 6640 pF @ 25 V | - | - | D3PAK | - | 624W (Tc) | -55°C ~ 150°C (TJ) |
|
APT5010LLLGMOSFET N-CH 500V 46A TO264 Microchip Technology |
30 | - |
|
数据表 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | Through Hole | 5V @ 2.5mA | 95 nC @ 10 V | 500 V | ±30V | 4360 pF @ 25 V | - | - | TO-264 [L] | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
