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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCP87130T-U/LC

MCP87130T-U/LC

MOSFET N-CH 25V 43A 8PDFN

Microchip Technology

3,426 -
MCP87130T-U/LC

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 3.3V, 10V 13.5mOhm @ 10A, 10V Surface Mount 1.7V @ 250µA 8 nC @ 4.5 V 25 V +10V, -8V 400 pF @ 12.5 V - - 8-PDFN (3.3x3.3) - 1.7W (Ta) -55°C ~ 150°C (TJ)
MCP87130T-U/MF

MCP87130T-U/MF

MOSFET N-CH 25V 43A 8PDFN

Microchip Technology

5,060 -
MCP87130T-U/MF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 3.3V, 10V 13.5mOhm @ 10A, 10V Surface Mount 1.7V @ 250µA 8 nC @ 4.5 V 25 V +10V, -8V 400 pF @ 12.5 V - - 8-PDFN (5x6) - 2.1W (Ta) -55°C ~ 150°C (TJ)
APTC90SKM60CT1G

APTC90SKM60CT1G

MOSFET N-CH 900V 59A SP1

Microchip Technology

3,052 -
APTC90SKM60CT1G

数据表

CoolMOS™ SP1 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 60mOhm @ 52A, 10V Chassis Mount 3.5V @ 6mA 540 nC @ 10 V 900 V ±20V 13600 pF @ 100 V - - SP1 - 462W (Tc) -40°C ~ 150°C (TJ)
APT100MC120JCU2

APT100MC120JCU2

SICFET N-CH 1200V 143A SOT227

Microchip Technology

8,508 -
APT100MC120JCU2

数据表

- SOT-227-4, miniBLOC Bulk Last Time Buy N-Channel SiCFET (Silicon Carbide) 143A (Tc) 20V 17mOhm @ 100A, 20V Chassis Mount 2.3V @ 2mA 360 nC @ 20 V 1200 V +25V, -10V 5960 pF @ 1000 V - - SOT-227 - 600W (Tc) -40°C ~ 150°C (TJ)
APT50MC120JCU2

APT50MC120JCU2

MOSFET N-CH 1200V 71A SOT227

Microchip Technology

6,825 -
APT50MC120JCU2

数据表

- SOT-227-4, miniBLOC Bulk Last Time Buy N-Channel MOSFET (Metal Oxide) 71A (Tc) 20V 34mOhm @ 50A, 20V Chassis Mount 2.3V @ 1mA (Typ) 179 nC @ 20 V 1200 V +25V, -10V 2980 pF @ 1000 V - - SOT-227 - 300W (Tc) -40°C ~ 150°C (TJ)
APT1001R1BN

APT1001R1BN

MOSFET N-CH 1000V 10.5A TO247AD

Microchip Technology

6,643 -
APT1001R1BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 1.1Ohm @ 5.25A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 1000 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
APT1001RBN

APT1001RBN

MOSFET N-CH 1000V 11A TO247AD

Microchip Technology

8,115 -
APT1001RBN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 1Ohm @ 5.5A, 10V Through Hole 4V @ 1mA 130 nC @ 10 V 1000 V ±30V 2950 pF @ 25 V - - TO-247AD - 310W (Tc) -55°C ~ 150°C (TJ)
APT5020BN

APT5020BN

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

8,858 -
APT5020BN

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 200mOhm @ 14A, 10V Through Hole 4V @ 1mA 210 nC @ 10 V 500 V ±30V 3500 pF @ 25 V - - TO-247AD - 360W (Tc) -55°C ~ 150°C (TJ)
APT5020BNFR

APT5020BNFR

MOSFET N-CH 500V 28A TO247AD

Microchip Technology

4,485 -
APT5020BNFR

数据表

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 200mOhm @ 14A, 10V Through Hole 4V @ 1mA 210 nC @ 10 V 500 V ±30V 3500 pF @ 25 V - - TO-247AD - 360W (Tc) -55°C ~ 150°C (TJ)
MIC94052BC6-TR

MIC94052BC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology

3,966 -
MIC94052BC6-TR

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V Surface Mount 1.2V @ 250µA - 6 V 6V - - - SC-70-6 - 270mW (Ta) -40°C ~ 150°C (TJ)
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