| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCP87130T-U/LCMOSFET N-CH 25V 43A 8PDFN Microchip Technology |
3,426 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 3.3V, 10V | 13.5mOhm @ 10A, 10V | Surface Mount | 1.7V @ 250µA | 8 nC @ 4.5 V | 25 V | +10V, -8V | 400 pF @ 12.5 V | - | - | 8-PDFN (3.3x3.3) | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) |
|
MCP87130T-U/MFMOSFET N-CH 25V 43A 8PDFN Microchip Technology |
5,060 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 3.3V, 10V | 13.5mOhm @ 10A, 10V | Surface Mount | 1.7V @ 250µA | 8 nC @ 4.5 V | 25 V | +10V, -8V | 400 pF @ 12.5 V | - | - | 8-PDFN (5x6) | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) |
|
APTC90SKM60CT1GMOSFET N-CH 900V 59A SP1 Microchip Technology |
3,052 | - |
|
数据表 |
CoolMOS™ | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | Chassis Mount | 3.5V @ 6mA | 540 nC @ 10 V | 900 V | ±20V | 13600 pF @ 100 V | - | - | SP1 | - | 462W (Tc) | -40°C ~ 150°C (TJ) |
|
APT100MC120JCU2SICFET N-CH 1200V 143A SOT227 Microchip Technology |
8,508 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | Chassis Mount | 2.3V @ 2mA | 360 nC @ 20 V | 1200 V | +25V, -10V | 5960 pF @ 1000 V | - | - | SOT-227 | - | 600W (Tc) | -40°C ~ 150°C (TJ) |
|
APT50MC120JCU2MOSFET N-CH 1200V 71A SOT227 Microchip Technology |
6,825 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | Chassis Mount | 2.3V @ 1mA (Typ) | 179 nC @ 20 V | 1200 V | +25V, -10V | 2980 pF @ 1000 V | - | - | SOT-227 | - | 300W (Tc) | -40°C ~ 150°C (TJ) |
|
APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD Microchip Technology |
6,643 | - |
|
数据表 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | Through Hole | 4V @ 1mA | 130 nC @ 10 V | 1000 V | ±30V | 2950 pF @ 25 V | - | - | TO-247AD | - | 310W (Tc) | -55°C ~ 150°C (TJ) |
|
APT1001RBNMOSFET N-CH 1000V 11A TO247AD Microchip Technology |
8,115 | - |
|
数据表 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | Through Hole | 4V @ 1mA | 130 nC @ 10 V | 1000 V | ±30V | 2950 pF @ 25 V | - | - | TO-247AD | - | 310W (Tc) | -55°C ~ 150°C (TJ) |
|
APT5020BNMOSFET N-CH 500V 28A TO247AD Microchip Technology |
8,858 | - |
|
数据表 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | Through Hole | 4V @ 1mA | 210 nC @ 10 V | 500 V | ±30V | 3500 pF @ 25 V | - | - | TO-247AD | - | 360W (Tc) | -55°C ~ 150°C (TJ) |
|
APT5020BNFRMOSFET N-CH 500V 28A TO247AD Microchip Technology |
4,485 | - |
|
数据表 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | Through Hole | 4V @ 1mA | 210 nC @ 10 V | 500 V | ±30V | 3500 pF @ 25 V | - | - | TO-247AD | - | 360W (Tc) | -55°C ~ 150°C (TJ) |
|
MIC94052BC6-TRMOSFET P-CH 6V 2A SC70-6 Microchip Technology |
3,966 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | Surface Mount | 1.2V @ 250µA | - | 6 V | 6V | - | - | - | SC-70-6 | - | 270mW (Ta) | -40°C ~ 150°C (TJ) |