Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 61

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT14F100B MOSFET N-CH 1000V 14A TO247 Microchip Technology	17	-	询价单	数据表	POWER MOS 8™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	980mOhm @ 7A, 10V	Through Hole	5V @ 1mA	120 nC @ 10 V	1000 V	±30V	3965 pF @ 25 V	-	-	TO-247 [B]	-	500W (Tc)	-55°C ~ 150°C (TJ)
APT5020BVRG MOSFET N-CH 500V 26A TO247 Microchip Technology	3,004	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	-	200mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	225 nC @ 10 V	500 V	-	4440 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT18M100S MOSFET N-CH 1000V 18A D3PAK Microchip Technology	5,954	-	询价单	数据表	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	700mOhm @ 9A, 10V	Surface Mount	5V @ 1mA	150 nC @ 10 V	1000 V	±30V	4845 pF @ 25 V	-	-	D3PAK	-	625W (Tc)	-55°C ~ 150°C (TJ)
APT17F120J MOSFET N-CH 1200V 18A ISOTOP Microchip Technology	3,084	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	580mOhm @ 14A, 10V	Chassis Mount	5V @ 2.5mA	300 nC @ 10 V	1200 V	±30V	9670 pF @ 25 V	-	-	ISOTOP®	-	545W (Tc)	-55°C ~ 150°C (TJ)
MSC025SMA120B4 TRANS SJT N-CH 1200V 103A TO247 Microchip Technology	2,475	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	103A (Tc)	20V	31mOhm @ 40A, 20V	Through Hole	2.8V @ 3mA	232 nC @ 20 V	1200 V	+23V, -10V	3020 pF @ 1000 V	-	-	TO-247-4	-	500W (Tc)	-55°C ~ 175°C (TJ)
TN0106N3-G-P003 MOSFET N-CH 60V 350MA TO92-3 Microchip Technology	2,759	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	350mA (Tj)	4.5V, 10V	3Ohm @ 500mA, 10V	Through Hole	2V @ 500µA	-	60 V	±20V	60 pF @ 25 V	-	-	TO-92-3	-	1W (Tc)	-55°C ~ 150°C (TJ)
APT18M100B MOSFET N-CH 1000V 18A TO247 Microchip Technology	9	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	700mOhm @ 9A, 10V	Through Hole	5V @ 1mA	150 nC @ 10 V	1000 V	±30V	4845 pF @ 25 V	-	-	TO-247 [B]	-	625W (Tc)	-55°C ~ 150°C (TJ)
APT77N60BC6 MOSFET N-CH 600V 77A TO247 Microchip Technology	3	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V	41mOhm @ 44.4A, 10V	Through Hole	3.6V @ 2.96mA	260 nC @ 10 V	600 V	±20V	13600 pF @ 25 V	-	-	TO-247 [B]	-	481W (Tc)	-55°C ~ 150°C (TJ)
APT31M100L MOSFET N-CH 1000V 32A TO264 Microchip Technology	9,029	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	400mOhm @ 16A, 10V	Through Hole	5V @ 2.5mA	260 nC @ 10 V	1000 V	±30V	8500 pF @ 25 V	-	-	TO-264	-	1040W (Tc)	-55°C ~ 150°C (TJ)
MSC035SMA070B4N MOSFET SIC 700 V 35 MOHM TO-247- Microchip Technology	8,067	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	75A (Tc)	18V, 20V	44mOhm @ 30A, 20V	Through Hole	5V @ 2mA	93 nC @ 20 V	700 V	+23V, -10V	1806 pF @ 700 V	-	-	TO-247-4	-	304W (Tc)	-55°C ~ 175°C (TJ)

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