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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT5010B2FLLGMOSFET N-CH 500V 46A T-MAX Microchip Technology |
40 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | Through Hole | 5V @ 2.5mA | 95 nC @ 10 V | 500 V | ±30V | 4360 pF @ 25 V | - | - | T-MAX™ [B2] | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
APT5010LFLLGMOSFET N-CH 500V 46A TO264 Microchip Technology |
43 | - |
|
数据表 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | Through Hole | 5V @ 2.5mA | 95 nC @ 10 V | 500 V | ±30V | 4360 pF @ 25 V | - | - | TO-264 [L] | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT38F80LMOSFET N-CH 800V 41A TO264 Microchip Technology |
27 | - |
|
数据表 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | Through Hole | 5V @ 2.5mA | 260 nC @ 10 V | 800 V | ±30V | 8070 pF @ 25 V | - | - | TO-264 [L] | - | 1040W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT38F80B2MOSFET N-CH 800V 41A T-MAX Microchip Technology |
26 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | Through Hole | 5V @ 2.5mA | 260 nC @ 10 V | 800 V | ±30V | 8070 pF @ 25 V | - | - | T-MAX™ [B2] | - | 1040W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT12060LVRGMOSFET N-CH 1200V 20A TO264 Microchip Technology |
30 | - |
|
数据表 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 600mOhm @ 10A, 10V | Through Hole | 4V @ 2.5mA | 650 nC @ 10 V | 1200 V | ±30V | 9500 pF @ 25 V | - | - | TO-264 (L) | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT28M120LMOSFET N-CH 1200V 29A TO264 Microchip Technology |
22 | - |
|
数据表 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 530mOhm @ 14A, 10V | Through Hole | 5V @ 2.5mA | 300 nC @ 10 V | 1200 V | ±30V | 9670 pF @ 25 V | - | - | TO-264 [L] | - | 1135W (Tc) | -55°C ~ 150°C (TJ) |
|
APT1201R2BLLGMOSFET N-CH 1200V 12A TO247 Microchip Technology |
16 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 1.2Ohm @ 6A, 10V | Through Hole | 5V @ 1mA | 150 nC @ 10 V | 1200 V | ±30V | 3100 pF @ 25 V | - | - | TO-247-3 | - | 400W (Tc) | -55°C ~ 150°C (TJ) |
|
APT51F50JMOSFET N-CH 500V 51A ISOTOP Microchip Technology |
22 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | Chassis Mount | 5V @ 2.5mA | 290 nC @ 10 V | 500 V | ±30V | 11600 pF @ 25 V | - | - | ISOTOP® | - | 480W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT5010JLLU2MOSFET N-CH 500V 41A SOT227 Microchip Technology |
31 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | Chassis Mount | 5V @ 2.5mA | 96 nC @ 10 V | 500 V | ±30V | 4360 pF @ 25 V | - | - | SOT-227 | - | 378W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT50M75JLLU2MOSFET N-CH 500V 51A SOT227 Microchip Technology |
31 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | Chassis Mount | 5V @ 1mA | 123 nC @ 10 V | 500 V | ±30V | 5590 pF @ 25 V | - | - | SOT-227 | - | 290W (Tc) | -55°C ~ 150°C (TJ) |
