Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 58

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT94N60L2C3G MOSFET N-CH 600V 94A 264 MAX Microchip Technology	4,641	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	94A (Tc)	10V	35mOhm @ 60A, 10V	Through Hole	3.9V @ 5.4mA	640 nC @ 10 V	600 V	±20V	13600 pF @ 25 V	-	-	264 MAX™ [L2]	-	833W (Tc)	-55°C ~ 150°C (TJ)
APT10M19BVRG MOSFET N-CH 100V 75A TO247 Microchip Technology	53	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	-	19mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	300 nC @ 10 V	100 V	-	6120 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT5015BVFRG MOSFET N-CH 500V 32A TO247 Microchip Technology	40	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	-	150mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	300 nC @ 10 V	500 V	-	5280 pF @ 25 V	-	-	TO-247 [B]	-	-	-
MSC040SMA120B4N MOSFET SIC 1200 V 40 MOHM TO-247 Microchip Technology	60	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	71A (Tc)	18V, 20V	50mOhm @ 40A, 20V	Through Hole	5V @ 2mA	137 nC @ 20 V	1200 V	+23V, -10V	1962 pF @ 1000 V	-	-	TO-247-4	-	372W (Tc)	-55°C ~ 175°C (TJ)
MSC015SMA070B4N MOSFET SIC 700 V 15 MOHM TO-247- Microchip Technology	60	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	112A (Tc)	18V, 20V	19mOhm @ 40A, 20V	Through Hole	5V @ 4mA	215 nC @ 20 V	700 V	+23V, -10V	4324 pF @ 700 V	-	-	TO-247-4	-	524W (Tc)	-55°C ~ 175°C (TJ)
MSC017SMA120B4N MOSFET SIC 1200 V 17 MOHM TO-247 Microchip Technology	30	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	119A (Tc)	18V, 20V	22mOhm @ 40A, 20V	Through Hole	5V @ 4.5mA	194 nC @ 20 V	1200 V	+23V, -10V	4274 pF @ 1200 V	-	-	TO-247-4	-	577W (Tc)	-55°C ~ 175°C (TJ)
MSC025SMA120B4N MOSFET SIC 1200 V 25 MOHM TO-247 Microchip Technology	30	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	113A (Tc)	18V, 20V	31mOhm @ 40A, 20V	Through Hole	5V @ 3mA	232 nC @ 20 V	1200 V	+23V, -10V	3633 pF @ 1000 V	-	-	TO-247-4	-	577W (Tc)	-55°C ~ 175°C (TJ)
MSC080SMA120JS15 MOSFET SIC 1200V 80 MOHM 15A SOT Microchip Technology	15	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	20V	100mOhm @ 15A, 20V	Chassis Mount	2.8V @ 1mA	64 nC @ 20 V	1200 V	+23V, -10V	838 pF @ 1000 V	-	-	SOT-227 (ISOTOP®)	-	143W (Tc)	-55°C ~ 175°C (TJ)
MSC017SMA120B MOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology	38	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	113A (Tc)	20V	22mOhm @ 40A, 20V	Through Hole	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	1200 V	+22V, -10V	5280 pF @ 1000 V	-	-	TO-247-3	-	455W (Tc)	-55°C ~ 175°C (TJ)
APT50M50JVR MOSFET N-CH 500V 77A ISOTOP Microchip Technology	10	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	-	50mOhm @ 500mA, 10V	Chassis Mount	4V @ 5mA	1000 nC @ 10 V	500 V	-	19600 pF @ 25 V	-	-	ISOTOP®	-	-	-

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