Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 60

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT34F60S MOSFET N-CH 600V 36A D3PAK Microchip Technology	86	-	询价单	数据表	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	10V	190mOhm @ 17A, 10V	Surface Mount	5V @ 1mA	165 nC @ 10 V	600 V	±30V	6640 pF @ 25 V	-	-	D3PAK	-	624W (Tc)	-55°C ~ 150°C (TJ)
APT75M50L MOSFET N-CH 500V 75A TO264 Microchip Technology	9	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	75mOhm @ 37A, 10V	Through Hole	5V @ 2.5mA	290 nC @ 10 V	500 V	±30V	11600 pF @ 25 V	-	-	TO-264 [L]	-	1040W (Tc)	-55°C ~ 150°C (TJ)
APT40N60JCU2 MOSFET N-CH 600V 40A SOT227 Microchip Technology	28	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	70mOhm @ 20A, 10V	Chassis Mount	3.9V @ 1mA	259 nC @ 10 V	600 V	±20V	7015 pF @ 25 V	-	-	SOT-227	-	290W (Tc)	-55°C ~ 150°C (TJ)
APT77N60JC3 MOSFET N-CH 600V 77A ISOTOP Microchip Technology	83	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V	35mOhm @ 60A, 10V	Chassis Mount	3.9V @ 5.4mA	640 nC @ 10 V	600 V	±20V	13600 pF @ 25 V	-	-	ISOTOP®	-	568W (Tc)	-55°C ~ 150°C (TJ)
APT40M35JVR MOSFET N-CH 400V 93A SOT227 Microchip Technology	2	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	93A (Tc)	10V	35mOhm @ 46.5A, 10V	Chassis Mount	4V @ 5mA	1065 nC @ 10 V	400 V	±30V	20160 pF @ 25 V	-	-	SOT-227 (ISOTOP®)	-	700W (Tc)	-55°C ~ 150°C (TJ)
APTML100U60R020T1AG MOSFET N-CH 1000V 20A SP1 Microchip Technology	12	-	询价单	数据表	-	SP1	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	720mOhm @ 10A, 10V	Chassis Mount	4V @ 2.5mA	-	1000 V	±30V	6000 pF @ 25 V	-	-	SP1	-	520W (Tc)	-40°C ~ 150°C (TJ)
APT13F120B MOSFET N-CH 1200V 14A TO247 Microchip Technology	4,848	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	1.4Ohm @ 7A, 10V	Through Hole	5V @ 1mA	145 nC @ 10 V	1200 V	±30V	4765 pF @ 25 V	-	-	TO-247 [B]	-	625W (Tc)	-55°C ~ 150°C (TJ)
APT20M16LFLLG MOSFET N-CH 200V 100A TO264 Microchip Technology	4,764	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	16mOhm @ 50A, 10V	Through Hole	5V @ 2.5mA	140 nC @ 10 V	200 V	-	7220 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT53F80J MOSFET N-CH 800V 57A ISOTOP Microchip Technology	7,929	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	110mOhm @ 43A, 10V	Chassis Mount	5V @ 5mA	570 nC @ 10 V	800 V	±30V	17550 pF @ 25 V	-	-	ISOTOP®	-	960W (Tc)	-55°C ~ 150°C (TJ)
APT37F50B MOSFET N-CH 500V 37A TO247 Microchip Technology	8	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37A (Tc)	10V	150mOhm @ 18A, 10V	Through Hole	5V @ 1mA	145 nC @ 10 V	500 V	±30V	5710 pF @ 25 V	-	-	TO-247 [B]	-	520W (Tc)	-55°C ~ 150°C (TJ)

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