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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC015SMA070SSICFET N-CH 700V 126A D3PAK Microchip Technology |
20 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 126A (Tc) | 20V | 19mOhm @ 40A, 20V | Surface Mount | 2.4V @ 4mA (Typ) | 215 nC @ 20 V | 700 V | +23V, -10V | 4500 pF @ 700 V | - | - | D3PAK | - | 370W (Tc) | -55°C ~ 175°C (TJ) |
|
APT10M11LVRGMOSFET N-CH 100V 100A TO264 Microchip Technology |
19 | - |
|
数据表 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 11mOhm @ 50A, 10V | Through Hole | 4V @ 2.5mA | 450 nC @ 10 V | 100 V | ±30V | 10300 pF @ 25 V | - | - | TO-264 (L) | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
MSC40SM120JCU2SICFET N-CH 1.2KV 55A SOT227 Microchip Technology |
12 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | Chassis Mount | 2.7V @ 1mA | 137 nC @ 20 V | 1200 V | +25V, -10V | 1990 pF @ 1000 V | - | - | SOT-227 (ISOTOP®) | - | 245W (Tc) | -55°C ~ 150°C (TJ) |
|
MSC017SMA120B4MOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology |
16 | - |
|
数据表 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 113A (Tc) | 20V | 22mOhm @ 40A, 20V | Through Hole | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | 1200 V | +22V, -10V | 5280 pF @ 1000 V | - | - | TO-247-4 | - | 455W (Tc) | -55°C ~ 175°C (TJ) |
|
APT58M80JMOSFET N-CH 800V 60A SOT227 Microchip Technology |
2 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 110mOhm @ 43A, 10V | Chassis Mount | 5V @ 5mA | 570 nC @ 10 V | 800 V | ±30V | 17550 pF @ 25 V | - | - | SOT-227 | - | 960W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC70SM120JCU3SICFET N-CH 1.2KV 89A SOT227 Microchip Technology |
5 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | Chassis Mount | 2.8V @ 1mA | 232 nC @ 20 V | 1200 V | +25V, -10V | 3020 pF @ 1000 V | - | - | SOT-227 (ISOTOP®) | - | 395W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APL1001JMOSFET N-CH 1000V 18A ISOTOP Microchip Technology |
2,360 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | Chassis Mount | 4V @ 2.5mA | - | 1000 V | ±30V | 7200 pF @ 25 V | - | - | ISOTOP® | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
APT1003RKLLGMOSFET N-CH 1000V 4A TO220 Microchip Technology |
9,461 | - |
|
数据表 |
POWER MOS 7® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | Through Hole | 5V @ 1mA | 34 nC @ 10 V | 1000 V | ±30V | 694 pF @ 25 V | - | - | TO-220 [K] | - | 139W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT4F120KMOSFET N-CH 1200V 4A TO220 Microchip Technology |
4,309 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 4.6Ohm @ 2A, 10V | Through Hole | 5V @ 500µA | 43 nC @ 10 V | 1200 V | ±30V | 1385 pF @ 25 V | - | - | TO-220 | - | 225W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT4M120KMOSFET N-CH 1200V 5A TO220 Microchip Technology |
6,233 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 4Ohm @ 2A, 10V | Through Hole | 5V @ 1mA | 43 nC @ 10 V | 1200 V | ±30V | 1385 pF @ 25 V | - | - | TO-220 [K] | - | 225W (Tc) | -55°C ~ 150°C (TJ) |
