Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 54

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT28M120B2 MOSFET N-CH 1200V 29A T-MAX Microchip Technology	56	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	560mOhm @ 14A, 10V	Through Hole	5V @ 2.5mA	300 nC @ 10 V	1200 V	±30V	9670 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT10050LVRG MOSFET N-CH 1000V 21A TO264 Microchip Technology	25	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	-	500mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	500 nC @ 10 V	1000 V	-	7900 pF @ 25 V	-	-	TO-264 [L]	-	-	-
MSC040SMA120B SICFET N-CH 1200V 66A TO247-3 Microchip Technology	35	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	66A (Tc)	20V	50mOhm @ 40A, 20V	Through Hole	2.7V @ 2mA	137 nC @ 20 V	1200 V	+23V, -10V	1990 pF @ 1000 V	-	-	TO-247-3	-	323W (Tc)	-55°C ~ 175°C (TJ)
MSC040SMA120S SICFET N-CH 1200V 64A TO268 Microchip Technology	12	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	64A (Tc)	20V	50mOhm @ 40A, 20V	Surface Mount	2.6V @ 2mA	137 nC @ 20 V	1200 V	+23V, -10V	1990 pF @ 1000 V	-	-	D3PAK	-	303W	-55°C ~ 175°C (TJ)
APT5010JVR MOSFET N-CH 500V 44A ISOTOP Microchip Technology	12	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	-	100mOhm @ 500mA, 10V	Chassis Mount	4V @ 2.5mA	470 nC @ 10 V	500 V	-	8900 pF @ 25 V	-	-	ISOTOP®	-	-	-
APT5010JVFR MOSFET N-CH 500V 44A ISOTOP Microchip Technology	20	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	-	100mOhm @ 500mA, 10V	Chassis Mount	4V @ 2.5mA	470 nC @ 10 V	500 V	-	8900 pF @ 25 V	-	-	ISOTOP®	-	-	-
MSC035SMA170S MOSFET SIC 1700V 35 MOHM TO-268 Microchip Technology	23	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	59A (Tc)	20V	45mOhm @ 30A, 20V	Surface Mount	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	1700 V	+23V, -10V	3300 pF @ 1000 V	-	-	D3PAK	-	278W (Tc)	-55°C ~ 175°C (TJ)
APT50M65JLL MOSFET N-CH 500V 58A ISOTOP Microchip Technology	20	-	询价单	数据表	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	65mOhm @ 29A, 10V	Chassis Mount	5V @ 2.5mA	141 nC @ 10 V	500 V	±30V	7010 pF @ 25 V	-	-	ISOTOP®	-	520W (Tc)	-55°C ~ 150°C (TJ)
MSC40SM120JCU3 SICFET N-CH 1.2KV 55A SOT227 Microchip Technology	66	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tc)	20V	50mOhm @ 40A, 20V	Chassis Mount	2.7V @ 1mA	137 nC @ 20 V	1200 V	+25V, -10V	1990 pF @ 1000 V	-	-	SOT-227 (ISOTOP®)	-	245W (Tc)	-55°C ~ 150°C (TJ)
MSC017SMA120J MOSFET SIC 1200V 17 MOHM SOT-227 Microchip Technology	17	-	询价单	数据表	-	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	88A (Tc)	20V	22mOhm @ 40A, 20V	-	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	1200 V	+23V, -10V	5280 pF @ 1000 V	-	-	SOT-227	-	278W (Tc)	-55°C ~ 175°C (TJ)

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