Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 53

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT56F50B2 MOSFET N-CH 500V 56A T-MAX Microchip Technology	58	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	100mOhm @ 28A, 10V	Through Hole	5V @ 2.5mA	220 nC @ 10 V	500 V	±30V	8800 pF @ 25 V	-	-	T-MAX™ [B2]	-	780W (Tc)	-55°C ~ 150°C (TJ)
MSC080SMA120S SICFET N-CH 1200V 35A D3PAK Microchip Technology	24	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	35A	20V	100mOhm @ 15A, 20V	Surface Mount	2.8V @ 1mA	64 nC @ 20 V	1200 V	+23V, -10V	838 pF @ 1000 V	-	-	D3PAK	-	182W (Tc)	-55°C ~ 175°C (TJ)
APT5014BLLG MOSFET N-CH 500V 35A TO247 Microchip Technology	41	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	140mOhm @ 17.5A, 10V	Through Hole	5V @ 1mA	72 nC @ 10 V	500 V	±30V	3261 pF @ 25 V	-	-	TO-247 [B]	-	403W (Tc)	-55°C ~ 150°C (TJ)
MSC035SMA070S MOSFET N-CH 700V D3PAK Microchip Technology	68	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	65A (Tc)	20V	44mOhm @ 30A, 20V	Surface Mount	2.7V @ 1mA	99 nC @ 20 V	700 V	+23V, -10V	2010 pF @ 700 V	-	-	D3PAK	-	206W (Tc)	-55°C ~ 175°C (TJ)
APT106N60B2C6 MOSFET N-CH 600V 106A T-MAX Microchip Technology	38	-	询价单	数据表	CoolMOS™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	106A (Tc)	10V	35mOhm @ 53A, 10V	Through Hole	3.5V @ 3.4mA	308 nC @ 10 V	600 V	±20V	8390 pF @ 25 V	-	-	T-MAX™ [B2]	-	833W (Tc)	-55°C ~ 150°C (TJ)
APT5010LVRG MOSFET N-CH 500V 47A TO264 Microchip Technology	19	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	-	100mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	470 nC @ 10 V	500 V	-	8900 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT29F100B2 MOSFET N-CH 1000V 30A T-MAX Microchip Technology	11	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	440mOhm @ 16A, 10V	Through Hole	5V @ 2.5mA	260 nC @ 10 V	1000 V	±30V	8500 pF @ 25 V	-	-	T-MAX™ [B2]	-	1040W (Tc)	-55°C ~ 150°C (TJ)
APT106N60LC6 MOSFET N-CH 600V 106A TO264 Microchip Technology	38	-	询价单	数据表	CoolMOS™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	106A (Tc)	10V	35mOhm @ 53A, 10V	Through Hole	3.5V @ 3.4mA	308 nC @ 10 V	600 V	±20V	8390 pF @ 25 V	-	-	TO-264 (L)	-	833W (Tc)	-55°C ~ 150°C (TJ)
APT48M80L MOSFET N-CH 800V 49A TO264 Microchip Technology	82	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	200mOhm @ 24A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	800 V	±30V	9330 pF @ 25 V	-	-	TO-264 [L]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT10078BLLG MOSFET N-CH 1000V 14A TO247 Microchip Technology	30	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	780mOhm @ 7A, 10V	Through Hole	5V @ 1mA	95 nC @ 10 V	1000 V	±30V	2525 pF @ 25 V	-	-	TO-247 [B]	-	403W (Tc)	-55°C ~ 150°C (TJ)

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