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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT10045JLLMOSFET N-CH 1000V 21A ISOTOP Microchip Technology |
20 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 450mOhm @ 11.5A, 10V | Chassis Mount | 5V @ 2.5mA | 154 nC @ 10 V | 1000 V | ±30V | 4350 pF @ 25 V | - | - | ISOTOP® | - | 460W (Tc) | -55°C ~ 150°C (TJ) |
|
MSC100SM70JCU2SICFET N-CH 700V 124A SOT227 Microchip Technology |
8 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | Chassis Mount | 2.4V @ 4mA | 215 nC @ 20 V | 700 V | +25V, -10V | 4500 pF @ 700 V | - | - | SOT-227 (ISOTOP®) | - | 365W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT60M60JFLLMOSFET N-CH 600V 70A ISOTOP Microchip Technology |
10 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | Chassis Mount | 5V @ 5mA | 289 nC @ 10 V | 600 V | ±30V | 12630 pF @ 25 V | - | - | ISOTOP® | - | 694W (Tc) | -55°C ~ 150°C (TJ) |
|
APT30F50BMOSFET N-CH 500V 30A TO247 Microchip Technology |
95 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | Through Hole | 5V @ 1mA | 115 nC @ 10 V | 500 V | ±30V | 4525 pF @ 25 V | - | - | TO-247 [B] | - | 415W (Tc) | -55°C ~ 150°C (TJ) |
|
APT9M100SMOSFET N-CH 1000V 9A D3PAK Microchip Technology |
47 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2605 pF @ 25 V | - | - | D3PAK | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
|
MSC080SMA120B4SICFET N-CH 1200V 37A TO247-4 Microchip Technology |
94 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 37A (Tc) | 20V | 100mOhm @ 15A, 20V | Through Hole | 2.8V @ 1mA | 64 nC @ 20 V | 1200 V | +23V, -10V | 838 pF @ 1000 V | - | - | TO-247-4 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
MSC060SMA070BSICFET N-CH 700V 39A TO247-3 Microchip Technology |
79 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 39A (Tc) | 20V | 75mOhm @ 20A, 20V | Through Hole | 2.4V @ 1mA | 56 nC @ 20 V | 700 V | +23V, -10V | 1175 pF @ 700 V | - | - | TO-247-3 | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
|
MSC060SMA070SSICFET N-CH 700V 37A D3PAK Microchip Technology |
92 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | Surface Mount | 2.4V @ 1mA (Typ) | 56 nC @ 20 V | 700 V | +23V, -10V | 1175 pF @ 700 V | - | - | D3PAK | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APT1204R7BFLLGMOSFET N-CH 1200V 3.5A TO247 Microchip Technology |
43 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | Through Hole | 5V @ 1mA | 31 nC @ 10 V | 1200 V | ±30V | 715 pF @ 25 V | - | - | TO-247 [B] | - | 135W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT20M38BVRGMOSFET N-CH 200V 67A TO247 Microchip Technology |
44 | - |
|
数据表 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | Through Hole | 4V @ 1mA | 225 nC @ 10 V | 200 V | ±30V | 6120 pF @ 25 V | - | - | TO-247 [B] | - | 370W (Tc) | -55°C ~ 150°C (TJ) |
