Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 51

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TN2106N3-G MOSFET N-CH 60V 300MA TO92-3 Microchip Technology	428	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Bag	Active	N-Channel	MOSFET (Metal Oxide)	300mA (Tj)	4.5V, 10V	2.5Ohm @ 500mA, 10V	Through Hole	2V @ 1mA	-	60 V	±20V	50 pF @ 25 V	-	-	TO-92-3	-	740mW (Tc)	-55°C ~ 150°C (TJ)
APT30M85BVRG MOSFET N-CH 300V 40A TO247 Microchip Technology	80	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	85mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	195 nC @ 10 V	300 V	±30V	4950 pF @ 25 V	-	-	TO-247 [B]	-	300W (Tc)	-55°C ~ 150°C (TJ)
APT1001RBVRG MOSFET N-CH 1000V 11A TO247 Microchip Technology	37	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	-	1Ohm @ 500mA, 10V	Through Hole	4V @ 1mA	225 nC @ 10 V	1000 V	-	3660 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT6025BVRG MOSFET N-CH 600V 25A TO247 Microchip Technology	71	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	-	250mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	275 nC @ 10 V	600 V	-	5160 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT37M100L MOSFET N-CH 1000V 37A TO264 Microchip Technology	25	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37A (Tc)	10V	330mOhm @ 18A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	1000 V	±30V	9835 pF @ 25 V	-	-	TO-264	-	1135W (Tc)	-55°C ~ 150°C (TJ)
MSC080SMA120J SICFET N-CH 1.2KV 35A SOT227 Microchip Technology	56	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	37A (Tc)	-	-	Chassis Mount	-	-	1200 V	-	-	-	-	SOT-227 (ISOTOP®)	-	-	-55°C ~ 175°C (TJ)
APT5010JVRU2 MOSFET N-CH 500V 44A SOT227 Microchip Technology	20	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	100mOhm @ 22A, 10V	Chassis Mount	4V @ 2.5mA	312 nC @ 10 V	500 V	±30V	7410 pF @ 25 V	-	-	SOT-227	-	450W (Tc)	-55°C ~ 150°C (TJ)
MSC015SMA070B4 TRANS SJT N-CH 700V 140A TO247-4 Microchip Technology	45	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	140A (Tc)	20V	19mOhm @ 40A, 20V	Through Hole	2.4V @ 4mA	215 nC @ 20 V	700 V	+23V, -10V	4500 pF @ 700 V	-	-	TO-247-4	-	455W (Tc)	-55°C ~ 175°C (TJ)
APT8030JVFR MOSFET N-CH 800V 25A ISOTOP Microchip Technology	21	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	-	300mOhm @ 500mA, 10V	Chassis Mount	4V @ 2.5mA	510 nC @ 10 V	800 V	-	7900 pF @ 25 V	-	-	ISOTOP®	-	-	-
APT40M70JVR MOSFET N-CH 400V 53A SOT227 Microchip Technology	40	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	70mOhm @ 26.5A, 10V	Chassis Mount	4V @ 2.5mA	495 nC @ 10 V	400 V	±30V	8890 pF @ 25 V	-	-	SOT-227 (ISOTOP®)	-	450W (Tc)	-55°C ~ 150°C (TJ)

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