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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT5024BLLG

APT5024BLLG

MOSFET N-CH 500V 22A TO247

Microchip Technology

6,450 -
APT5024BLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 240mOhm @ 11A, 10V Through Hole 5V @ 1mA 43 nC @ 10 V 500 V ±30V 1900 pF @ 25 V - - TO-247 [B] - 265W (Tc) -55°C ~ 150°C (TJ)
APT53N60BC6

APT53N60BC6

MOSFET N-CH 600V 53A TO247

Microchip Technology

8,754 -
APT53N60BC6

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 53A (Tc) 10V 70mOhm @ 25.8A, 10V Through Hole 3.5V @ 1.72mA 154 nC @ 10 V 600 V ±20V 4020 pF @ 25 V - - TO-247 [B] - 417W (Tc) -55°C ~ 150°C (TJ)
APT5024BFLLG

APT5024BFLLG

MOSFET N-CH 500V 22A TO247

Microchip Technology

8,794 -
APT5024BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) - 240mOhm @ 11A, 10V Through Hole 5V @ 1mA 43 nC @ 10 V 500 V - 1900 pF @ 25 V - - TO-247 [B] - - -
APT17F80S

APT17F80S

MOSFET N-CH 800V 18A D3PAK

Microchip Technology

7,017 -
APT17F80S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 580mOhm @ 9A, 10V Surface Mount 5V @ 1mA 122 nC @ 10 V 800 V ±30V 3757 pF @ 25 V - - D3PAK - 500W (Tc) -55°C ~ 150°C (TJ)
APT1003RBLLG

APT1003RBLLG

MOSFET N-CH 1000V 4A TO247

Microchip Technology

3,799 -
APT1003RBLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3Ohm @ 2A, 10V Through Hole 5V @ 1mA 34 nC @ 10 V 1000 V ±30V 694 pF @ 25 V - - TO-247 [B] - 139W (Tc) -55°C ~ 150°C (TJ)
APT14F100S

APT14F100S

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology

9,915 -
APT14F100S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 980mOhm @ 7A, 10V Surface Mount 5V @ 1mA 120 nC @ 10 V 1000 V ±30V 3965 pF @ 25 V - - D3PAK - 500W (Tc) -55°C ~ 150°C (TJ)
APT5024SLLG

APT5024SLLG

MOSFET N-CH 500V 22A D3PAK

Microchip Technology

9,492 -
APT5024SLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) - 240mOhm @ 11A, 10V Surface Mount 5V @ 1mA 43 nC @ 10 V 500 V - 1900 pF @ 25 V - - D3PAK - - -
APT10M25BVRG

APT10M25BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

3,500 -
APT10M25BVRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) - 25mOhm @ 500mA, 10V Through Hole 4V @ 1mA 225 nC @ 10 V 100 V - 5160 pF @ 25 V - - TO-247 [B] - - -
APT1003RSLLG

APT1003RSLLG

MOSFET N-CH 1000V 4A D3PAK

Microchip Technology

7,858 -
APT1003RSLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) - 3Ohm @ 2A, 10V Surface Mount 5V @ 1mA 34 nC @ 10 V 1000 V - 694 pF @ 25 V - - D3PAK - - -
APT17F100B

APT17F100B

MOSFET N-CH 1000V 17A TO247

Microchip Technology

1 -
APT17F100B

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 800mOhm @ 9A, 10V Through Hole 5V @ 1mA 150 nC @ 10 V 1000 V ±30V 4845 pF @ 25 V - - TO-247 [B] - 625W (Tc) -55°C ~ 150°C (TJ)
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