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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT5020SVFRG

APT5020SVFRG

MOSFET N-CH 500V 26A D3PAK

Microchip Technology

2,588 -
APT5020SVFRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 26A (Tc) - 200mOhm @ 500mA, 10V Surface Mount 4V @ 1mA 225 nC @ 10 V 500 V - 4440 pF @ 25 V - - D3PAK - - -
APT13F120S

APT13F120S

MOSFET N-CH 1200V 14A D3PAK

Microchip Technology

2,918 -
APT13F120S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 1.2Ohm @ 7A, 10V Surface Mount 5V @ 1mA 145 nC @ 10 V 1200 V ±30V 4765 pF @ 25 V - - D3PAK - 625W (Tc) -55°C ~ 150°C (TJ)
APT24M80S

APT24M80S

MOSFET N-CH 800V 25A D3PAK

Microchip Technology

4,827 -
APT24M80S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 390mOhm @ 12A, 10V Surface Mount 5V @ 1mA 150 nC @ 10 V 800 V ±30V 4595 pF @ 25 V - - D3PAK - 625W (Tc) -55°C ~ 150°C (TJ)
APT1204R7SFLLG

APT1204R7SFLLG

MOSFET N-CH 1200V 3.5A D3PAK

Microchip Technology

2,029 -
APT1204R7SFLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 3.5A (Tc) - 4.7Ohm @ 1.75A, 10V Surface Mount 5V @ 1mA 31 nC @ 10 V 1200 V - 715 pF @ 25 V - - D3PAK - - -
APT20M45SVRG

APT20M45SVRG

MOSFET N-CH 200V 56A D3PAK

Microchip Technology

4,106 -
APT20M45SVRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 56A (Tc) - 45mOhm @ 500mA, 10V Surface Mount 4V @ 1mA 195 nC @ 10 V 200 V - 4860 pF @ 25 V - - D3PAK - - -
APT20M38SVRG/TR

APT20M38SVRG/TR

MOSFET N-CH 200V 67A D3PAK

Microchip Technology

8,015 -
APT20M38SVRG/TR

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 67A (Tc) 10V 38mOhm @ 33.5A, 10V Surface Mount 4V @ 1mA 225 nC @ 10 V 200 V ±30V 6120 pF @ 25 V - - D3PAK - 370W (Tc) -55°C ~ 150°C (TJ)
APT1003RSFLLG

APT1003RSFLLG

MOSFET N-CH 1000V 4A D3PAK

Microchip Technology

9,612 -
APT1003RSFLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) - 3Ohm @ 2A, 10V Surface Mount 5V @ 1mA 34 nC @ 10 V 1000 V - 694 pF @ 25 V - - D3PAK - - -
APT20M45BVFRG

APT20M45BVFRG

MOSFET N-CH 200V 56A TO247

Microchip Technology

8,790 -
APT20M45BVFRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 45mOhm @ 500mA, 10V Through Hole 4V @ 1mA 195 nC @ 10 V 200 V ±30V 4860 pF @ 25 V - - TO-247 [B] - 300W (Tc) -55°C ~ 150°C (TJ)
APT1201R6BVRG

APT1201R6BVRG

MOSFET N-CH 1200V 8A TO-247

Microchip Technology

4,698 -
APT1201R6BVRG

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
APT6030BVRG

APT6030BVRG

MOSFET N-CH 600V 21A TO247

Microchip Technology

3,087 -
APT6030BVRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) - 300mOhm @ 10.5A, 10V Through Hole 4V @ 1mA 150 nC @ 10 V 600 V - 3750 pF @ 25 V - - TO-247 [B] - - -
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