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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT4014BVFRG

APT4014BVFRG

MOSFET N-CH 400V 28A TO247

Microchip Technology

2,813 -
APT4014BVFRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) - 140mOhm @ 500mA, 10V Through Hole 4V @ 1mA 160 nC @ 10 V 400 V - 3600 pF @ 25 V - - TO-247 [B] - - -
APT17F100S

APT17F100S

MOSFET N-CH 1000V 17A D3PAK

Microchip Technology

4,310 -
APT17F100S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 780mOhm @ 9A, 10V Surface Mount 5V @ 1mA 150 nC @ 10 V 1000 V ±30V 4845 pF @ 25 V - - D3PAK - 625W (Tc) -55°C ~ 150°C (TJ)
APT43F60B2

APT43F60B2

MOSFET N-CH 600V 45A T-MAX

Microchip Technology

3,111 -
APT43F60B2

数据表

POWER MOS 8™ TO-247-3 Variant Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 150mOhm @ 21A, 10V Through Hole 5V @ 2.5mA 215 nC @ 10 V 600 V ±30V 8590 pF @ 25 V - - T-MAX™ [B2] - 780W (Tc) -55°C ~ 150°C (TJ)
APT5016BLLG

APT5016BLLG

MOSFET N-CH 500V 30A TO247

Microchip Technology

4,615 -
APT5016BLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 160mOhm @ 15A, 10V Through Hole 5V @ 1mA 72 nC @ 10 V 500 V ±30V 2833 pF @ 25 V - - TO-247 [B] - 329W (Tc) -55°C ~ 150°C (TJ)
APT42F50S

APT42F50S

MOSFET N-CH 500V 42A D3PAK

Microchip Technology

6,706 -
APT42F50S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 130mOhm @ 21A, 10V Surface Mount 5V @ 1mA 170 nC @ 10 V 500 V ±30V 6810 pF @ 25 V - - D3PAK - 625W (Tc) -55°C ~ 150°C (TJ)
APT5018SLLG

APT5018SLLG

MOSFET N-CH 500V 27A D3PAK

Microchip Technology

2,456 -
APT5018SLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 27A (Tc) - 180mOhm @ 13.5A, 10V Surface Mount 5V @ 1mA 58 nC @ 10 V 500 V - 2596 pF @ 25 V - - D3PAK - - -
APT56M50B2

APT56M50B2

MOSFET N-CH 500V 56A T-MAX

Microchip Technology

6,407 -
APT56M50B2

数据表

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 100mOhm @ 28A, 10V Through Hole 5V @ 2.5mA 220 nC @ 10 V 500 V ±30V 8800 pF @ 25 V - - T-MAX™ - 780W (Tc) -55°C ~ 150°C (TJ)
APT6038SLLG

APT6038SLLG

MOSFET N-CH 600V 17A D3PAK

Microchip Technology

6,665 -
APT6038SLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) - 380mOhm @ 8.5A, 10V Surface Mount 5V @ 1mA 43 nC @ 10 V 600 V - 1850 pF @ 25 V - - D3PAK - - -
APT5018SFLLG

APT5018SFLLG

MOSFET N-CH 500V 27A D3PAK

Microchip Technology

5,427 -
APT5018SFLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 27A (Tc) - 180mOhm @ 13.5A, 10V Surface Mount 5V @ 1mA 58 nC @ 10 V 500 V - 2596 pF @ 25 V - - D3PAK - - -
APT5018SLLG/TR

APT5018SLLG/TR

MOSFET N-CH 500V 27A D3PAK

Microchip Technology

2,432 -
APT5018SLLG/TR

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 180mOhm @ 13.5A, 10V Surface Mount 5V @ 1mA 58 nC @ 10 V 500 V ±30V 2596 pF @ 25 V - - D3PAK - 300W (Tc) -55°C ~ 150°C (TJ)
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