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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT9M100BMOSFET N-CH 1000V 9A TO247 Microchip Technology |
5,926 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2605 pF @ 25 V | - | - | TO-247 [B] | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT12M80BMOSFET N-CH 800V 13A TO247 Microchip Technology |
7,362 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 800mOhm @ 6A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 800 V | ±30V | 2470 pF @ 25 V | - | - | TO-247 [B] | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT11F80BMOSFET N-CH 800V 12A TO247 Microchip Technology |
8,921 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 800 V | ±30V | 2471 pF @ 25 V | - | - | TO-247 [B] | - | 337W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT30N60BC6MOSFET N-CH 600V 30A TO247 Microchip Technology |
5,603 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | Through Hole | 3.5V @ 960µA | 88 nC @ 10 V | 600 V | ±20V | 2267 pF @ 25 V | - | - | TO-247 [B] | - | 219W (Tc) | -55°C ~ 150°C (TJ) |
|
MSC750SMA170SAMOSFET SIC 1700 V 750 MOHM D2PAK Microchip Technology |
5,022 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab) | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 6A (Tc) | 20V | 940mOhm @ 2.5A, 20V | Surface Mount | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | 1700 V | +23V, -10V | 184 pF @ 1000 V | - | - | D2PAK-7 | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APT9F100BMOSFET N-CH 1000V 9A TO247 Microchip Technology |
4,088 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2606 pF @ 25 V | - | - | TO-247 [B] | - | 337W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC360SMA120SAMOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology |
3,455 | - |
|
数据表 |
- | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | - | 3.14V @ 250µA | 21 nC @ 20 V | 1200 V | +23V, -10V | 255 pF @ 1000 V | - | - | - | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APT23F60BMOSFET N-CH 600V 24A TO247 Microchip Technology |
7,389 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 290mOhm @ 11A, 10V | Through Hole | 5V @ 1mA | 110 nC @ 10 V | 600 V | ±30V | 4415 pF @ 25 V | - | - | TO-247 [B] | - | 415W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MSC090SMA070SAMOSFET SIC 700 V 90 MOHM TO-263- Microchip Technology |
7,555 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 25A (Tc) | 20V | 115mOhm @ 15A, 20V | Surface Mount | 2.4V @ 750µA | 38 nC @ 20 V | 700 V | +23V, -10V | 785 pF @ 700 V | - | - | TO-263-7 | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
|
APT30F50SMOSFET N-CH 500V 30A D3PAK Microchip Technology |
9,825 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | Surface Mount | 5V @ 1mA | 115 nC @ 10 V | 500 V | ±30V | 4525 pF @ 25 V | - | - | D3PAK | - | 415W (Tc) | -55°C ~ 150°C (TJ) |
