Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 13

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT8M100B MOSFET N-CH 1000V 8A TO247 Microchip Technology	536	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	1.8Ohm @ 4A, 10V	Through Hole	5V @ 1mA	60 nC @ 10 V	1000 V	±30V	1885 pF @ 25 V	-	-	TO-247 [B]	-	290W (Tc)	-55°C ~ 150°C (TJ)
MSC750SMA170S TRANS SJT 1700V D3PAK Microchip Technology	442	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	-	SiCFET (Silicon Carbide)	6A (Tc)	-	-	Surface Mount	-	-	1700 V	-	-	-	-	D3PAK	-	-	-
MSC090SMA070B SICFET N-CH 700V TO247-3 Microchip Technology	127	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	-	-	-	Through Hole	-	-	700 V	-	-	-	-	TO-247-3	-	-	-55°C ~ 175°C (TJ)
MSC180SMA120S MOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology	256	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	20V	225mOhm @ 8A, 20V	Surface Mount	3.26V @ 500µA	34 nC @ 20 V	1200 V	+23V, -10V	510 pF @ 1000 V	-	-	D3PAK	-	125W (Tc)	-55°C ~ 175°C (TJ)
APT22F80B MOSFET N-CH 800V 23A TO247 Microchip Technology	262	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	500mOhm @ 12A, 10V	Through Hole	5V @ 1mA	150 nC @ 10 V	800 V	±30V	4595 pF @ 25 V	-	-	TO-247 [B]	-	625W (Tc)	-55°C ~ 150°C (TJ)
APT30M70BVRG MOSFET N-CH 300V 48A TO247 Microchip Technology	101	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	48A (Tc)	10V	70mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	225 nC @ 10 V	300 V	±30V	5870 pF @ 25 V	-	-	TO-247 [B]	-	370W (Tc)	-55°C ~ 150°C (TJ)
MSC035SMA070B4 TRANS SJT N-CH 700V 77A TO247-4 Microchip Technology	136	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	77A (Tc)	20V	44mOhm @ 30A, 20V	Through Hole	2.7V @ 2mA (Typ)	99 nC @ 20 V	700 V	+23V, -10V	2010 pF @ 700 V	-	-	TO-247-4	-	283W (Tc)	-55°C ~ 175°C (TJ)
VP2206N2 MOSFET P-CH 60V 750MA TO39 Microchip Technology	919	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Bag	Active	P-Channel	MOSFET (Metal Oxide)	750mA (Tj)	5V, 10V	900mOhm @ 3.5A, 10V	Through Hole	3.5V @ 10mA	-	60 V	±20V	450 pF @ 25 V	-	-	TO-39	-	360mW (Tc)	-55°C ~ 150°C (TJ)
LP0701LG-G MOSFET P-CH 16.5V 700MA 8SOIC Microchip Technology	9,843	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	700mA (Tj)	2V, 5V	1.5Ohm @ 300mA, 5V	Surface Mount	1V @ 1.1mA	-	16.5 V	±10V	250 pF @ 15 V	-	-	8-SOIC	-	1.5W (Tc)	-55°C ~ 150°C (TJ)
APT60N60BCSG MOSFET N-CH 600V 60A TO247 Microchip Technology	132	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	45mOhm @ 44A, 10V	Through Hole	3.9V @ 3mA	190 nC @ 10 V	600 V	±30V	7200 pF @ 25 V	-	-	TO-247 [B]	-	431W (Tc)	-55°C ~ 150°C (TJ)

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