| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT5018BLLGMOSFET N-CH 500V 27A TO247 Microchip Technology |
8,883 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | Through Hole | 5V @ 1mA | 58 nC @ 10 V | 500 V | ±30V | 2596 pF @ 25 V | - | - | TO-247 [B] | - | 300W (Tc) | -55°C ~ 150°C (TJ) |
|
APT6038BLLGMOSFET N-CH 600V 17A TO247 Microchip Technology |
4,771 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | Through Hole | 5V @ 1mA | 43 nC @ 10 V | 600 V | - | 1850 pF @ 25 V | - | - | TO-247 [B] | - | - | - |
|
|
APT5024SLLG/TRMOSFET N-CH 500V 22A D3PAK Microchip Technology |
2,528 | - |
|
数据表 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 240mOhm @ 11A, 10V | Surface Mount | 5V @ 1mA | 43 nC @ 10 V | 500 V | ±30V | 1900 pF @ 25 V | - | - | D3PAK | - | 265W (Tc) | -55°C ~ 150°C (TJ) |
|
APT5018BFLLGMOSFET N-CH 500V 27A TO247 Microchip Technology |
5,510 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | Through Hole | 5V @ 1mA | 58 nC @ 10 V | 500 V | - | 2596 pF @ 25 V | - | - | TO-247 [B] | - | - | - |
|
APT6038BFLLGMOSFET N-CH 600V 17A TO247 Microchip Technology |
7,406 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | Through Hole | 5V @ 1mA | 43 nC @ 10 V | 600 V | - | 1850 pF @ 25 V | - | - | TO-247 [B] | - | - | - |
|
APT24M80BMOSFET N-CH 800V 25A TO247 Microchip Technology |
8,775 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | Through Hole | 5V @ 1mA | 150 nC @ 10 V | 800 V | ±30V | 4595 pF @ 25 V | - | - | TO-247 [B] | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT22F80SMOSFET N-CH 800V 23A D3PAK Microchip Technology |
5,929 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 430mOhm @ 12A, 10V | Surface Mount | 5V @ 1mA | 150 nC @ 10 V | 800 V | ±30V | 4595 pF @ 25 V | - | - | D3PAK | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT34N80B2C3GMOSFET N-CH 800V 34A T-MAX Microchip Technology |
8,905 | - |
|
数据表 |
- | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | Through Hole | 3.9V @ 2mA | 355 nC @ 10 V | 800 V | ±20V | 4510 pF @ 25 V | - | - | T-MAX™ [B2] | - | 417W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT34N80LC3GMOSFET N-CH 800V 34A TO264 Microchip Technology |
6,569 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | Through Hole | 3.9V @ 2mA | 355 nC @ 10 V | 800 V | ±20V | 4510 pF @ 25 V | - | - | TO-264 [L] | - | 417W (Tc) | -55°C ~ 150°C (TJ) |
|
APT20M45BVRGMOSFET N-CH 200V 56A TO247 Microchip Technology |
4,131 | - |
|
数据表 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | Through Hole | 4V @ 1mA | 195 nC @ 10 V | 200 V | ±30V | 4860 pF @ 25 V | - | - | TO-247 [B] | - | 300W (Tc) | -55°C ~ 150°C (TJ) |