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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT5018BLLG

APT5018BLLG

MOSFET N-CH 500V 27A TO247

Microchip Technology

8,883 -
APT5018BLLG

数据表

POWER MOS 7® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 180mOhm @ 13.5A, 10V Through Hole 5V @ 1mA 58 nC @ 10 V 500 V ±30V 2596 pF @ 25 V - - TO-247 [B] - 300W (Tc) -55°C ~ 150°C (TJ)
APT6038BLLG

APT6038BLLG

MOSFET N-CH 600V 17A TO247

Microchip Technology

4,771 -
APT6038BLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) - 380mOhm @ 8.5A, 10V Through Hole 5V @ 1mA 43 nC @ 10 V 600 V - 1850 pF @ 25 V - - TO-247 [B] - - -
APT5024SLLG/TR

APT5024SLLG/TR

MOSFET N-CH 500V 22A D3PAK

Microchip Technology

2,528 -
APT5024SLLG/TR

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 240mOhm @ 11A, 10V Surface Mount 5V @ 1mA 43 nC @ 10 V 500 V ±30V 1900 pF @ 25 V - - D3PAK - 265W (Tc) -55°C ~ 150°C (TJ)
APT5018BFLLG

APT5018BFLLG

MOSFET N-CH 500V 27A TO247

Microchip Technology

5,510 -
APT5018BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 27A (Tc) - 180mOhm @ 13.5A, 10V Through Hole 5V @ 1mA 58 nC @ 10 V 500 V - 2596 pF @ 25 V - - TO-247 [B] - - -
APT6038BFLLG

APT6038BFLLG

MOSFET N-CH 600V 17A TO247

Microchip Technology

7,406 -
APT6038BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) - 380mOhm @ 8.5A, 10V Through Hole 5V @ 1mA 43 nC @ 10 V 600 V - 1850 pF @ 25 V - - TO-247 [B] - - -
APT24M80B

APT24M80B

MOSFET N-CH 800V 25A TO247

Microchip Technology

8,775 -
APT24M80B

数据表

POWER MOS 8™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 390mOhm @ 12A, 10V Through Hole 5V @ 1mA 150 nC @ 10 V 800 V ±30V 4595 pF @ 25 V - - TO-247 [B] - 625W (Tc) -55°C ~ 150°C (TJ)
APT22F80S

APT22F80S

MOSFET N-CH 800V 23A D3PAK

Microchip Technology

5,929 -
APT22F80S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 430mOhm @ 12A, 10V Surface Mount 5V @ 1mA 150 nC @ 10 V 800 V ±30V 4595 pF @ 25 V - - D3PAK - 625W (Tc) -55°C ~ 150°C (TJ)
APT34N80B2C3G

APT34N80B2C3G

MOSFET N-CH 800V 34A T-MAX

Microchip Technology

8,905 -
APT34N80B2C3G

数据表

- TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 145mOhm @ 22A, 10V Through Hole 3.9V @ 2mA 355 nC @ 10 V 800 V ±20V 4510 pF @ 25 V - - T-MAX™ [B2] - 417W (Tc) -55°C ~ 150°C (TJ)
APT34N80LC3G

APT34N80LC3G

MOSFET N-CH 800V 34A TO264

Microchip Technology

6,569 -
APT34N80LC3G

数据表

- TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 145mOhm @ 22A, 10V Through Hole 3.9V @ 2mA 355 nC @ 10 V 800 V ±20V 4510 pF @ 25 V - - TO-264 [L] - 417W (Tc) -55°C ~ 150°C (TJ)
APT20M45BVRG

APT20M45BVRG

MOSFET N-CH 200V 56A TO247

Microchip Technology

4,131 -
APT20M45BVRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 45mOhm @ 500mA, 10V Through Hole 4V @ 1mA 195 nC @ 10 V 200 V ±30V 4860 pF @ 25 V - - TO-247 [B] - 300W (Tc) -55°C ~ 150°C (TJ)
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