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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT38N60BC6MOSFET N-CH 600V 38A TO247 Microchip Technology |
4,523 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | Through Hole | 3.5V @ 1.2mA | 112 nC @ 10 V | 600 V | ±20V | 2826 pF @ 25 V | - | - | TO-247 [B] | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
|
APT7M120SMOSFET N-CH 1200V 8A D3PAK Microchip Technology |
7,559 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 2.1Ohm @ 3A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 1200 V | ±30V | 2565 pF @ 25 V | - | - | D3PAK | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
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|
TP2535N3-GMOSFET P-CH 350V 86MA TO92-3 Microchip Technology |
678 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | Through Hole | 2.4V @ 1mA | - | 350 V | ±20V | 125 pF @ 25 V | - | - | TO-92-3 | - | 740mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
APT18M80BMOSFET N-CH 800V 19A TO247 Microchip Technology |
5,767 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 530mOhm @ 9A, 10V | Through Hole | 5V @ 1mA | 120 nC @ 10 V | 800 V | ±30V | 3760 pF @ 25 V | - | - | TO-247 [B] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
MSC180SMA120SAMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology |
8,073 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab) | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | Surface Mount | 3.26V @ 500µA | 34 nC @ 20 V | 1200 V | +23V, -10V | 510 pF @ 1000 V | - | - | D2PAK-7 | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
TP2435N8-GMOSFET P-CH 350V 231MA TO243AA Microchip Technology |
3,903 | - |
|
数据表 |
- | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 231mA (Tj) | 3V, 10V | 15Ohm @ 500mA, 10V | Surface Mount | 2.4V @ 1mA | - | 350 V | ±20V | 200 pF @ 25 V | - | - | TO-243AA (SOT-89) | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) |
|
|
APT14M100BMOSFET N-CH 1000V 14A TO247 Microchip Technology |
9,075 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | Through Hole | 5V @ 1mA | 120 nC @ 10 V | 1000 V | ±30V | 3965 pF @ 25 V | - | - | TO-247 [B] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT17F80BMOSFET N-CH 800V 18A TO247 Microchip Technology |
6,804 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | Through Hole | 5V @ 1mA | 122 nC @ 10 V | 800 V | ±30V | 3757 pF @ 25 V | - | - | TO-247 [B] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
APT37F50SMOSFET N-CH 500V 37A D3PAK Microchip Technology |
3,504 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | Surface Mount | 5V @ 1mA | 145 nC @ 10 V | 500 V | ±30V | 5710 pF @ 25 V | - | - | D3PAK | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT14M100SMOSFET N-CH 1000V 14A D3PAK Microchip Technology |
7,539 | - |
|
数据表 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 880mOhm @ 7A, 10V | Surface Mount | 5V @ 1mA | 120 nC @ 10 V | 1000 V | ±30V | 3965 pF @ 25 V | - | - | D3PAK | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
