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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC025SMA120SSICFET N-CH 1.2KV 100A D3PAK Microchip Technology |
127 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 89A (Tc) | - | - | Surface Mount | - | - | 1200 V | - | - | - | - | D3PAK | - | - | -55°C ~ 175°C (TJ) |
|
APT50M38JLLMOSFET N-CH 500V 88A ISOTOP Microchip Technology |
89 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | Chassis Mount | 5V @ 5mA | 270 nC @ 10 V | 500 V | ±30V | 12000 pF @ 25 V | - | - | ISOTOP® | - | 694W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT10021JFLLMOSFET N-CH 1000V 37A ISOTOP Microchip Technology |
56 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | Chassis Mount | 5V @ 5mA | 395 nC @ 10 V | 1000 V | ±30V | 9750 pF @ 25 V | - | - | ISOTOP® | - | 694W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT12040JVRMOSFET N-CH 1200V 26A SOT227 Microchip Technology |
43 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | Chassis Mount | 4V @ 5mA | 1200 nC @ 10 V | 1200 V | ±30V | 18000 pF @ 25 V | - | - | SOT-227 (ISOTOP®) | - | 700W (Tc) | -55°C ~ 150°C (TJ) |
|
MSCSM120SKM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 Microchip Technology |
31 | - |
|
数据表 |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 79A | 20V | 31mOhm @ 40A, 20V | Chassis Mount | 2.8V @ 1mA | 232 nC @ 20 V | 1200 V | +25V, -10V | 3020 pF @ 1000 V | - | - | - | - | 310W | -55°C ~ 175°C (TJ) |
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|
VN2222LL-G-P003MOSFET N-CH 60V 230MA TO92-3 Microchip Technology |
2,004 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | Through Hole | 2.5V @ 1mA | - | 60 V | ±30V | 60 pF @ 25 V | - | - | TO-92-3 | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DN2535N3-G-P003MOSFET N-CH 350V 120MA TO92 Microchip Technology |
1,981 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | Through Hole | - | - | 350 V | ±20V | 300 pF @ 25 V | - | - | TO-92 (TO-226) | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
VN0300L-G-P002MOSFET N-CH 30V 640MA TO92-3 Microchip Technology |
1,874 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 640mA (Tj) | 5V, 10V | 1.2Ohm @ 1A, 10V | Through Hole | 2.5V @ 1mA | - | 30 V | ±30V | 190 pF @ 20 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
APT18F60BMOSFET N-CH 600V 19A TO247 Microchip Technology |
2,157 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 390mOhm @ 9A, 10V | Through Hole | 5V @ 1mA | 90 nC @ 10 V | 600 V | ±30V | 3550 pF @ 25 V | - | - | TO-247 [B] | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT7F100BMOSFET N-CH 1000V 7A TO247 Microchip Technology |
3,218 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | Through Hole | 5V @ 500µA | 58 nC @ 10 V | 1000 V | ±30V | 1800 pF @ 25 V | - | - | TO-247 [B] | - | 290W (Tc) | -55°C ~ 150°C (TJ) |
