| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VN0550N3-G-P013MOSFET N-CH 500V 50MA TO92-3 Microchip Technology |
2,099 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | Through Hole | 4V @ 1mA | - | 500 V | ±20V | 55 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
VN4012L-GMOSFET N-CH 400V 160MA TO92-3 Microchip Technology |
457 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 160mA (Tj) | 4.5V | 12Ohm @ 100mA, 4.5V | Through Hole | 1.8V @ 1mA | - | 400 V | ±20V | 110 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
TP2635N3-GMOSFET P-CH 350V 180MA TO92-3 Microchip Technology |
344 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | Through Hole | 2V @ 1mA | - | 350 V | ±20V | 300 pF @ 25 V | - | - | TO-92-3 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
TP2640N3-GMOSFET P-CH 400V 180MA TO92-3 Microchip Technology |
7,091 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Obsolete | P-Channel | MOSFET (Metal Oxide) | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | Through Hole | 2V @ 1mA | - | 400 V | ±20V | 300 pF @ 25 V | - | - | TO-92-3 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
VP2206N3-G-P003MOSFET P-CH 60V 640MA TO92-3 Microchip Technology |
2,228 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 640mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | Through Hole | 3.5V @ 10mA | - | 60 V | ±20V | 450 pF @ 25 V | - | - | TO-92-3 | - | 740mW (Tc) | -55°C ~ 150°C (TJ) |
|
MCP87090T-U/LCMOSFET N-CH 25V 48A 8PDFN Microchip Technology |
2,011 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 4.5V, 10V | 10.5mOhm @ 10V | Surface Mount | 1.7V @ 250µA | 10 nC @ 4.5 V | 25 V | +10V, -8V | 580 pF @ 12.5 V | - | - | 8-PDFN (3.3x3.3) | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
VN1206L-G-P002MOSFET N-CH 120V 230MA TO92-3 Microchip Technology |
9,158 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 230mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | Through Hole | 2V @ 1mA | - | 120 V | ±30V | 125 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
MCP87090T-U/MFMOSFET N-CH 25V 64A 8PDFN Microchip Technology |
1,340 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 64A (Tc) | 4.5V, 10V | 10.5mOhm @ 10V | Surface Mount | 1.7V @ 250µA | 10 nC @ 4.5 V | 25 V | +10V, -8V | 580 pF @ 12.5 V | - | - | 8-PDFN (5x6) | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) |
|
VP0550N3-G-P013MOSFET P-CH 500V 54MA TO92-3 Microchip Technology |
2,581 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Active | P-Channel | MOSFET (Metal Oxide) | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | Through Hole | 4.5V @ 1mA | - | 500 V | ±20V | 70 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
VN2224N3-GMOSFET N-CH 240V 540MA TO92-3 Microchip Technology |
1,025 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 540mA (Tj) | 5V, 10V | 1.25Ohm @ 2A, 10V | Through Hole | 3V @ 5mA | - | 240 V | ±20V | 350 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |