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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
VN0550N3-G-P013

VN0550N3-G-P013

MOSFET N-CH 500V 50MA TO92-3

Microchip Technology

2,099 -
VN0550N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 50mA (Tj) 5V, 10V 60Ohm @ 50mA, 10V Through Hole 4V @ 1mA - 500 V ±20V 55 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
VN4012L-G

VN4012L-G

MOSFET N-CH 400V 160MA TO92-3

Microchip Technology

457 -
VN4012L-G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 160mA (Tj) 4.5V 12Ohm @ 100mA, 4.5V Through Hole 1.8V @ 1mA - 400 V ±20V 110 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
TP2635N3-G

TP2635N3-G

MOSFET P-CH 350V 180MA TO92-3

Microchip Technology

344 -
TP2635N3-G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bag Active P-Channel MOSFET (Metal Oxide) 180mA (Tj) 2.5V, 10V 15Ohm @ 300mA, 10V Through Hole 2V @ 1mA - 350 V ±20V 300 pF @ 25 V - - TO-92-3 - 1W (Ta) -55°C ~ 150°C (TJ)
TP2640N3-G

TP2640N3-G

MOSFET P-CH 400V 180MA TO92-3

Microchip Technology

7,091 -
TP2640N3-G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bag Obsolete P-Channel MOSFET (Metal Oxide) 180mA (Tj) 2.5V, 10V 15Ohm @ 300mA, 10V Through Hole 2V @ 1mA - 400 V ±20V 300 pF @ 25 V - - TO-92-3 - 1W (Ta) -55°C ~ 150°C (TJ)
VP2206N3-G-P003

VP2206N3-G-P003

MOSFET P-CH 60V 640MA TO92-3

Microchip Technology

2,228 -
VP2206N3-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 640mA (Tj) 5V, 10V 900mOhm @ 3.5A, 10V Through Hole 3.5V @ 10mA - 60 V ±20V 450 pF @ 25 V - - TO-92-3 - 740mW (Tc) -55°C ~ 150°C (TJ)
MCP87090T-U/LC

MCP87090T-U/LC

MOSFET N-CH 25V 48A 8PDFN

Microchip Technology

2,011 -
MCP87090T-U/LC

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 10.5mOhm @ 10V Surface Mount 1.7V @ 250µA 10 nC @ 4.5 V 25 V +10V, -8V 580 pF @ 12.5 V - - 8-PDFN (3.3x3.3) - 1.8W (Ta) -55°C ~ 150°C (TJ)
VN1206L-G-P002

VN1206L-G-P002

MOSFET N-CH 120V 230MA TO92-3

Microchip Technology

9,158 -
VN1206L-G-P002

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 230mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V Through Hole 2V @ 1mA - 120 V ±30V 125 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
MCP87090T-U/MF

MCP87090T-U/MF

MOSFET N-CH 25V 64A 8PDFN

Microchip Technology

1,340 -
MCP87090T-U/MF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 4.5V, 10V 10.5mOhm @ 10V Surface Mount 1.7V @ 250µA 10 nC @ 4.5 V 25 V +10V, -8V 580 pF @ 12.5 V - - 8-PDFN (5x6) - 2.2W (Ta) -55°C ~ 150°C (TJ)
VP0550N3-G-P013

VP0550N3-G-P013

MOSFET P-CH 500V 54MA TO92-3

Microchip Technology

2,581 -
VP0550N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active P-Channel MOSFET (Metal Oxide) 54mA (Tj) 5V, 10V 125Ohm @ 10mA, 10V Through Hole 4.5V @ 1mA - 500 V ±20V 70 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
VN2224N3-G

VN2224N3-G

MOSFET N-CH 240V 540MA TO92-3

Microchip Technology

1,025 -
VN2224N3-G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 540mA (Tj) 5V, 10V 1.25Ohm @ 2A, 10V Through Hole 3V @ 5mA - 240 V ±20V 350 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
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