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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP450PBFMOSFET N-CH 500V 14A TO247AC Infineon Technologies |
4,587 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | Through Hole | 4V @ 250µA | 150 nC @ 10 V | 500 V | ±20V | 2600 pF @ 25 V | - | - | TO-247AC | - | 190W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD64CN10N GMOSFET N-CH 100V 17A TO252-3 Infineon Technologies |
3,552 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 64mOhm @ 17A, 10V | Surface Mount | 4V @ 20µA | 9 nC @ 10 V | 100 V | ±20V | 569 pF @ 50 V | - | - | PG-TO252-3 | - | 44W (Tc) | -55°C ~ 175°C (TJ) |
|
IPS60R600PFD7SAKMA1MOSFET N-CH 650V 6A TO251-3 Infineon Technologies |
7,614 | - |
|
数据表 |
CoolMOS™PFD7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | Through Hole | 4.5V @ 80µA | 8.5 nC @ 10 V | 650 V | ±20V | 344 pF @ 400 V | - | - | PG-TO251-3 | - | 31W (Tc) | -40°C ~ 150°C (TJ) |
|
|
SPD02N50C3MOSFET N-CH 560V 1.8A TO252-3 Infineon Technologies |
6,158 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | Surface Mount | 3.9V @ 80µA | 9 nC @ 10 V | 560 V | ±20V | 190 pF @ 25 V | - | - | PG-TO252-3-11 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFR3711ZTRRPBFMOSFET N-CH 20V 93A DPAK Infineon Technologies |
6,928 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | Surface Mount | 2.45V @ 250µA | 27 nC @ 4.5 V | 20 V | ±20V | 2160 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
IPC65SR048CFDAE8206X2SA2MOSFET N-CH Infineon Technologies |
9,939 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSP129E6327MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
3,273 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | Surface Mount | 1V @ 108µA | 5.7 nC @ 5 V | 240 V | ±20V | 108 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IPS80R2K0P7AKMA1MOSFET N-CH 800V 3A TO251-3 Infineon Technologies |
6,820 | - |
|
数据表 |
CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | Through Hole | 3.5V @ 50µA | 9 nC @ 10 V | 800 V | ±20V | 175 pF @ 500 V | - | - | PG-TO251-3-342 | - | 24W (Tc) | -55°C ~ 150°C (TJ) |
|
BSS315PL6327HTSA1MOSFET P-CH 30V 1.5A SOT23-3 Infineon Technologies |
4,527 | - |
|
数据表 |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 4.5V, 10V | 150mOhm @ 1.5A, 10V | Surface Mount | 2V @ 11µA | 2.3 nC @ 5 V | 30 V | ±20V | 282 pF @ 15 V | - | - | PG-SOT23 | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPD040N03LGBTMA1MOSFET N-CH 30V 90A TO252-31 Infineon Technologies |
8,992 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 38 nC @ 10 V | 30 V | ±20V | 3900 pF @ 15 V | - | - | PG-TO252-3-11 | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
