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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSZ0945NDXTMA1TRENCH <= 40V Infineon Technologies |
6,882 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPD06P004NATMA1MOSFET P-CH 60V 16.4A TO252-3 Infineon Technologies |
4,887 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | Surface Mount | 4V @ 710µA | 27 nC @ 10 V | 60 V | ±20V | 1100 pF @ 30 V | - | - | PG-TO252-3 | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFP22N50APBFXKMA1MOSFET N-CH 500V 22A TO247AC Infineon Technologies |
9,787 | - |
|
数据表 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | Through Hole | 4V @ 250µA | 120 nC @ 10 V | 500 V | ±30V | 3450 pF @ 25 V | - | - | TO-247AC | - | 277W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF830PBFMOSFET N-CH 500V 4.5A TO220AB Infineon Technologies |
8,275 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | Through Hole | 4V @ 250µA | 38 nC @ 10 V | 500 V | ±20V | 610 pF @ 25 V | - | - | TO-220AB | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SPU08P06PMOSFET P-CH 60V 8.83A TO251-3 Infineon Technologies |
7,092 | - |
|
数据表 |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8.83A (Ta) | - | 300mOhm @ 6.2A, 10V | Through Hole | 4V @ 250µA | 13 nC @ 10 V | 60 V | - | 420 pF @ 25 V | - | - | PG-TO251-3 | - | 42W (Tc) | - |
|
|
IRFR420TRPBFMOSFET N-CH 500V 2.4A DPAK Infineon Technologies |
2,014 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | Surface Mount | 4V @ 250µA | 19 nC @ 10 V | 500 V | ±20V | 360 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
|
BSS7728NH6327XTSA2MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
7,261 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 2.3V @ 26µA | 1.5 nC @ 10 V | 60 V | ±20V | 56 pF @ 25 V | AEC-Q101 | - | PG-SOT23 | Automotive | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI3443DVMOSFET P-CH 20V 4.4A MICRO6 Infineon Technologies |
4,639 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | Surface Mount | 1.5V @ 250µA | 15 nC @ 4.5 V | 20 V | ±12V | 1079 pF @ 10 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
SPU09P06PLMOSFET P-CH 60V 9.7A TO251-3 Infineon Technologies |
9,939 | - |
|
数据表 |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | Through Hole | 2V @ 250µA | 21 nC @ 10 V | 60 V | ±20V | 450 pF @ 25 V | - | - | P-TO251-3-1 | - | 42W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD25DP06LMSAUMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
6,538 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | Surface Mount | 2V @ 270µA | 13.8 nC @ 10 V | 60 V | ±20V | 420 pF @ 30 V | - | - | PG-TO252-3-313 | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
