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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SPD11N10

SPD11N10

MOSFET N-CH 100V 10.5A TO252-3

Infineon Technologies

7,345 -
SPD11N10

数据表

SIPMOS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 170mOhm @ 7.8A, 10V Surface Mount 4V @ 21µA 18.3 nC @ 10 V 100 V ±20V 400 pF @ 25 V - - PG-TO252-3-11 - 50W (Tc) -55°C ~ 175°C (TJ)
IPD06P004NSAUMA1

IPD06P004NSAUMA1

MOSFET P-CH 60V 16.4A TO252

Infineon Technologies

9,055 -
IPD06P004NSAUMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16.4A (Tc) 10V 90mOhm @ 16.4A, 10V Surface Mount 4V @ 710µA 27 nC @ 10 V 60 V ±20V 1100 pF @ 30 V - - PG-TO252-3-313 - 63W (Tc) -55°C ~ 175°C (TJ)
IRF5805TRPBF

IRF5805TRPBF

MOSFET P-CH 30V 3.8A MICRO6

Infineon Technologies

3,681 -
IRF5805TRPBF

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 30 V ±20V 511 pF @ 25 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
IPD50R3K0CEBTMA1

IPD50R3K0CEBTMA1

MOSFET N-CH 500V 1.7A TO252-3

Infineon Technologies

9,197 -
IPD50R3K0CEBTMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 13V 3Ohm @ 400mA, 13V Surface Mount 3.5V @ 30µA 4.3 nC @ 10 V 500 V ±20V 84 pF @ 100 V - - PG-TO252-3 - 18W (Tc) -55°C ~ 150°C (TJ)
IPU64CN10N G

IPU64CN10N G

MOSFET N-CH 100V 17A TO251-3

Infineon Technologies

3,266 -
IPU64CN10N G

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 64mOhm @ 17A, 10V Through Hole 4V @ 20µA 9 nC @ 10 V 100 V ±20V 569 pF @ 50 V - - PG-TO251-3 - 44W (Tc) -55°C ~ 175°C (TJ)
IPC60N04S406ATMA1

IPC60N04S406ATMA1

MOSFET N-CH 40V 60A TDSON-8-23

Infineon Technologies

9,669 -
IPC60N04S406ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 6mOhm @ 30A, 10V Surface Mount 4V @ 30µA 33 nC @ 10 V 40 V ±20V 2650 pF @ 25 V AEC-Q101 - PG-TDSON-8-23 Automotive 63W (Tc) -55°C ~ 175°C (TJ)
IPC60N04S4L06ATMA1

IPC60N04S4L06ATMA1

MOSFET N-CH 40V 60A TDSON-8-23

Infineon Technologies

6,267 -
IPC60N04S4L06ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 5.6mOhm @ 30A, 10V Surface Mount 2.2V @ 30µA 43 nC @ 10 V 40 V ±16V 3600 pF @ 25 V AEC-Q101 - PG-TDSON-8-23 Automotive 63W (Tc) -55°C ~ 175°C (TJ)
IRF7380TRPBFXTMA1

IRF7380TRPBFXTMA1

PLANAR 40<-<100V

Infineon Technologies

9,406 -
IRF7380TRPBFXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SPU30N03S2L-10

SPU30N03S2L-10

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies

5,230 -
SPU30N03S2L-10

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V Through Hole 2V @ 50µA 39.4 nC @ 10 V 30 V ±20V 1460 pF @ 25 V - - P-TO251-3-1 - 82W (Tc) -55°C ~ 175°C (TJ)
SPD07N20

SPD07N20

MOSFET N-CH 200V 7A TO252-3

Infineon Technologies

7,684 -
SPD07N20

数据表

SIPMOS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 400mOhm @ 4.5A, 10V Surface Mount 4V @ 1mA 31.5 nC @ 10 V 200 V ±20V 530 pF @ 25 V - - PG-TO252-3 - 40W (Tc) -55°C ~ 175°C (TJ)
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