| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUXTIFR12N25DTRRIC DISCRETE Infineon Technologies |
9,875 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUXHAFR6215IC DISCRETE Infineon Technologies |
8,623 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
64-4126PBFIC MOSFET Infineon Technologies |
3,489 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUXDKG4PC40S-EIC DISCRETE Infineon Technologies |
5,579 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUXTALR3915IC DISCRETE Infineon Technologies |
7,429 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
94-4344PBFIC MOSFET Infineon Technologies |
2,409 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRLML5203MOSFET P-CH 30V 3A MICRO3/SOT23 Infineon Technologies |
5,954 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 4.5V, 10V | 98mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 510 pF @ 25 V | - | - | Micro3™/SOT-23 | - | 1.25W (Ta) | - |
|
IPD050N03LGBTMA1MOSFET N-CH 30V 50A TO252-31 Infineon Technologies |
5,422 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 31 nC @ 10 V | 30 V | ±20V | 3200 pF @ 15 V | - | - | PG-TO252-3-11 | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC0804LSATMA1MOSFET N-CH 100V 40A TDSON-8-6 Infineon Technologies |
8,230 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | Surface Mount | 2.3V @ 36µA | 14.6 nC @ 4.5 V | 100 V | ±20V | 2100 pF @ 50 V | - | - | PG-TDSON-8-6 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC014N06LS5ATMA1MOSFET 60V TDSON-8-7 Infineon Technologies |
7,855 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 60 V | - | - | - | - | PG-TDSON-8-7 | - | - | - |