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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSP129E6327TMOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
8,064 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | Surface Mount | 1V @ 108µA | 5.7 nC @ 5 V | 240 V | ±20V | 108 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IPB12CN10NGATMA2MOSFET N-CH 100V 67A TO263-3 Infineon Technologies |
4,029 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF3717TRPBF-1MOSFET N-CH 20V 20A 8-SOIC Infineon Technologies |
5,681 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | Surface Mount | 2.45V @ 250µA | 33 nC @ 4.5 V | 20 V | ±20V | 2890 pF @ 10 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRLR8721TRPBF-1MOSFET N-CH 30V 65A DPAK Infineon Technologies |
6,318 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | Surface Mount | 2.35V @ 25µA | 13 nC @ 4.5 V | 30 V | ±20V | 1030 pF @ 15 V | - | - | TO-252AA (DPAK) | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIPC69SN60C3X2SA2MOSFET Infineon Technologies |
9,288 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SIPC10N65C3X1SA1MOSFET Infineon Technologies |
7,084 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSO613SPVMOSFET P-CH 60V 3.44A 8DSO Infineon Technologies |
2,722 | - |
|
数据表 |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | Surface Mount | 4V @ 1mA | 30 nC @ 10 V | 60 V | ±20V | 875 pF @ 25 V | - | - | PG-DSO-8 | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SPD30N03S2L-10MOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
7,405 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | Surface Mount | 2V @ 50µA | 41.8 nC @ 10 V | 30 V | ±20V | 1550 pF @ 25 V | - | - | PG-TO252-3-11 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUXVNGP4062D-EIC DISCRETE Infineon Technologies |
9,570 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AUXHKGP4062D-EIC DISCRETE Infineon Technologies |
4,917 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
