Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 638

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSP295E6327 MOSFET N-CH 60V 1.8A SOT223-4 Infineon Technologies	2,650	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.8A (Ta)	4.5V, 10V	300mOhm @ 1.8A, 10V	Surface Mount	1.8V @ 400µA	17 nC @ 10 V	60 V	±20V	368 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSZ0502NSIATMA1 MOSFET N-CH 30V 22A/40A TSDSON Infineon Technologies	7,522	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta), 40A (Tc)	4.5V, 10V	2.8mOhm @ 20A, 10V	Surface Mount	2V @ 250µA	26 nC @ 10 V	30 V	±20V	1600 pF @ 15 V	-	-	PG-TSDSON-8-FL	-	2.1W (Ta), 43W (Tc)	-55°C ~ 150°C (TJ)
IRF7821PBF MOSFET N-CH 30V 13.6A 8SO Infineon Technologies	7,316	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.6A (Ta)	4.5V, 10V	9.1mOhm @ 13A, 10V	Surface Mount	1V @ 250µA	14 nC @ 4.5 V	30 V	±20V	1010 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 155°C (TJ)
BSS215PL6327HTSA1 MOSFET P-CH 20V 1.5A SOT23-3 Infineon Technologies	2,454	-	询价单	数据表	OptiMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.5A (Ta)	2.5V, 4.5V	150mOhm @ 1.5A, 4.5V	Surface Mount	1.2V @ 11µA	3.6 nC @ 4.5 V	20 V	±12V	346 pF @ 15 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
BSP171PE6327 MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies	8,018	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	4.5V, 10V	300mOhm @ 1.9A, 10V	Surface Mount	2V @ 460µA	20 nC @ 10 V	60 V	±20V	460 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IRF5800TR MOSFET P-CH 30V 4A MICRO6 Infineon Technologies	6,381	-	询价单	数据表	HEXFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	4.5V, 10V	85mOhm @ 4A, 10V	Surface Mount	1V @ 250µA	17 nC @ 10 V	30 V	±20V	535 pF @ 25 V	-	-	Micro6™(TSOP-6)	-	2W (Ta)	-55°C ~ 150°C (TJ)
SPD25N06S2-40 MOSFET N-CH 55V 29A TO252-3 Infineon Technologies	5,775	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	40mOhm @ 13A, 10V	Surface Mount	4V @ 26µA	18 nC @ 10 V	55 V	±20V	710 pF @ 25 V	-	-	PG-TO252-3-11	-	68W (Tc)	-55°C ~ 175°C (TJ)
SPD26N06S2L-35 MOSFET N-CH 55V 30A TO252-3 Infineon Technologies	7,525	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	35mOhm @ 13A, 10V	Surface Mount	2V @ 26µA	24 nC @ 10 V	55 V	±20V	790 pF @ 25 V	-	-	PG-TO252-3-11	-	68W (Tc)	-55°C ~ 175°C (TJ)
IPD350N06LGBUMA1 MOSFET N-CH 60V 29A TO252-3 Infineon Technologies	9,066	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	4.5V, 10V	35mOhm @ 29A, 10V	Surface Mount	2V @ 28µA	13 nC @ 5 V	60 V	±20V	800 pF @ 30 V	-	-	PG-TO252-3	-	68W (Tc)	-55°C ~ 175°C (TJ)
IRL40T209ATMA1 MOSFET N-CH 40V 300A 8HSOF Infineon Technologies	4,680	-	询价单	数据表	StrongIRFET™	8-PowerSFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	300A (Tc)	4.5V, 10V	0.72mOhm @ 100A, 10V	Surface Mount	2.4V @ 250µA	269 nC @ 4.5 V	40 V	±20V	16000 pF @ 20 V	-	-	PG-HSOF-8-1	-	500W (Tc)	-55°C ~ 175°C (TJ)

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