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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPC60R600E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
6,406 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPD04N60C3MOSFET N-CH 600V 4.5A TO252-3 Infineon Technologies |
6,542 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | Surface Mount | 3.9V @ 200µA | 25 nC @ 10 V | 600 V | ±20V | 490 pF @ 25 V | - | - | PG-TO252-3 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPD07N60C3MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
3,493 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Surface Mount | 3.9V @ 350µA | 27 nC @ 10 V | 600 V | ±20V | 790 pF @ 25 V | - | - | PG-TO252-3 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IPI90R800C3MOSFET N-CH 900V 6.9A TO262-3 Infineon Technologies |
3,838 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | Through Hole | 3.5V @ 460µA | 42 nC @ 10 V | 900 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO262-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP90R500C3MOSFET N-CH 900V 11A TO220-3 Infineon Technologies |
6,715 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | Through Hole | 3.5V @ 740µA | 68 nC @ 10 V | 900 V | ±20V | 1700 pF @ 100 V | - | - | PG-TO220-3 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPI08N80C3MOSFET N-CH 800V 8A TO262-3 Infineon Technologies |
4,058 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | Through Hole | 3.9V @ 470µA | 60 nC @ 10 V | 800 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO262-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
SPS03N60C3MOSFET N-CH 600V 3.2A TO251-3 Infineon Technologies |
6,148 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Through Hole | 3.9V @ 135µA | 17 nC @ 10 V | 600 V | ±20V | 400 pF @ 25 V | - | - | PG-TO251-3-11 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD06P005NATMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
3,659 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | Surface Mount | 4V @ 270µA | 10.6 nC @ 10 V | 60 V | ±20V | 420 pF @ 30 V | - | - | PG-TO252-3 | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
|
|
ISZ062N06NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
7,248 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRLMS4502TRMOSFET P-CH 12V 5.5A MICRO6 Infineon Technologies |
2,852 | - |
|
数据表 |
HEXFET® | SOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 2.5V, 4.5V | 42mOhm @ 5.5A, 4.5V | Surface Mount | 600mV @ 250µA (Min) | 33 nC @ 5 V | 12 V | ±12V | 1820 pF @ 10 V | - | - | Micro6™(TSOP-6) | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) |
