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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7322D1TRPBFMOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
8,751 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 29 nC @ 4.5 V | 20 V | ±12V | 780 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SO | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
SPD50P03LGXTMOSFET P-CH 30V 50A TO252-5 Infineon Technologies |
5,333 | - |
|
数据表 |
OptiMOS™ P | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 7mOhm @ 50A, 10V | Surface Mount | 2V @ 250µA | 126 nC @ 10 V | 30 V | ±20V | 6880 pF @ 25 V | - | - | PG-TO252-5 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI045N10N3GXKMOSFET N-CH 100V 137A TO262-3 Infineon Technologies |
7,812 | - |
|
数据表 |
OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 137A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | Through Hole | 3.5V @ 150µA | 117 nC @ 10 V | 100 V | ±20V | 8410 pF @ 50 V | - | - | PG-TO262-3 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP023NE7N3GMOSFET N-CH 75V 120A TO220-3 Infineon Technologies |
5,063 | - |
|
数据表 |
OptiMOS™ 3 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | Through Hole | 3.8V @ 273µA | 206 nC @ 10 V | 75 V | ±20V | 14400 pF @ 37.5 V | - | - | PG-TO220-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SPP04N80C3XKMOSFET N-CH 800V 4A TO220-3 Infineon Technologies |
7,878 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | Through Hole | 3.9V @ 240µA | 31 nC @ 10 V | 800 V | ±20V | 570 pF @ 100 V | - | - | PG-TO220-3 | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP06N80C3XKMOSFET N-CH 800V 6A TO220-3 Infineon Technologies |
6,201 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | Through Hole | 3.9V @ 250µA | 41 nC @ 10 V | 800 V | ±20V | 785 pF @ 100 V | - | - | PG-TO220-3 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP08N80C3XKMOSFET N-CH 800V 8A TO220-3 Infineon Technologies |
5,373 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | Through Hole | 3.9V @ 470µA | 60 nC @ 10 V | 800 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO220-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW65R045C7300XKSA1MOSFET N-CH 650V 46A TO247 Infineon Technologies |
6,262 | - |
|
数据表 |
CoolMOS™ C7 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | Through Hole | 4V @ 1.25mA | 93 nC @ 10 V | 650 V | ±20V | 4340 pF @ 400 V | - | - | PG-TO247-3 | - | 227W (Tc) | -55°C ~ 150°C (TJ) |
|
BSS83PL6327HTSA1MOSFET P-CH 60V 330MA SOT23-3 Infineon Technologies |
9,850 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 330mA (Ta) | 4.5V, 10V | 2Ohm @ 330mA, 10V | Surface Mount | 2V @ 80µA | 3.57 nC @ 10 V | 60 V | ±20V | 78 pF @ 25 V | AEC-Q101 | - | PG-SOT23 | Automotive | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
BSP295E6327TMOSFET N-CH 60V 1.8A SOT223-4 Infineon Technologies |
7,254 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | Surface Mount | 1.8V @ 400µA | 17 nC @ 10 V | 60 V | ±20V | 368 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
