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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPD04N60S5BTMA1MOSFET N-CH 600V 4.5A TO252-3 Infineon Technologies |
4,812 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | Surface Mount | 5.5V @ 200µA | 22.9 nC @ 10 V | 600 V | ±20V | 580 pF @ 25 V | - | - | PG-TO252-3 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
IPI100N04S303MATMA1MOSFET N-CH TO262-3 Infineon Technologies |
6,513 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPP90N06S4L04AKSA2MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
8,131 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | Through Hole | 2.2V @ 90µA | 170 nC @ 10 V | 60 V | ±16V | 13000 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPI100N04S303MATMA2MOSFET N-CH TO262-3 Infineon Technologies |
3,116 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPC022N03L3X1SA1MOSFET N-CH 30V 1A SAWN ON FOIL Infineon Technologies |
7,812 | - |
|
数据表 |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 10V | 50mOhm @ 2A, 10V | Surface Mount | 2.2V @ 250µA | - | 30 V | - | - | - | - | Sawn on foil | - | - | - |
|
|
IPP80N06S4L05AKSA2MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
5,185 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 40A, 4.5V | Through Hole | 2.2V @ 60µA | 110 nC @ 10 V | 60 V | ±16V | 8180 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80P04P405AKSA1MOSFET P-CH 40V 80A TO220-3 Infineon Technologies |
6,580 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 151 nC @ 10 V | 40 V | ±20V | 10300 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC0996NSATMA1MOSFET N-CH 34V 13A TDSON-8-5 Infineon Technologies |
5,464 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V, 10V | 9mOhm @ 8A, 10V | Surface Mount | 2V @ 250µA | 20 nC @ 10 V | 34 V | ±20V | 1500 pF @ 15 V | - | - | PG-TDSON-8-5 | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
94-2355PBFMOSFET N-CH 100V TO-220AB Infineon Technologies |
7,345 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | 4V, 10V | - | - | - | - | - | ±16V | - | - | - | - | - | - | - |
|
IPU105N03L GMOSFET N-CH 30V 35A TO251-3 Infineon Technologies |
3,026 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | Through Hole | 2.2V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 1500 pF @ 15 V | - | - | PG-TO251-3-21 | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
