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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPL65R340CFDAUMA1

IPL65R340CFDAUMA1

MOSFET N-CH 650V 10.9A THIN-PAK

Infineon Technologies

4,797 -
IPL65R340CFDAUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V Surface Mount 4.5V @ 400µA 41 nC @ 10 V 650 V ±20V 1100 pF @ 100 V - - PG-VSON-4 - 104.2W (Tc) -40°C ~ 150°C (TJ)
IPD135N03LGBTMA1

IPD135N03LGBTMA1

LV POWER MOS

Infineon Technologies

8,150 -
IPD135N03LGBTMA1

数据表

OptiMOS™ 3 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 13.5mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 10 nC @ 10 V 30 V ±20V 1000 pF @ 15 V - - PG-TO252-3 - 31W (Tc) -55°C ~ 175°C (TJ)
IPL65R420E6AUMA1

IPL65R420E6AUMA1

MOSFET N-CH 650V 10.1A THIN-PAK

Infineon Technologies

6,988 -
IPL65R420E6AUMA1

数据表

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.1A (Tc) 10V 420mOhm @ 3.4A, 10V Surface Mount 3.5V @ 300µA 39 nC @ 10 V 650 V ±20V 710 pF @ 100 V - - PG-VSON-4 - 83W (Tc) -40°C ~ 150°C (TJ)
IPL65R460CFDAUMA1

IPL65R460CFDAUMA1

MOSFET N-CH 650V 8.3A THIN-PAK

Infineon Technologies

2,551 -
IPL65R460CFDAUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Tc) 10V 460mOhm @ 3.4A, 10V Surface Mount 4.5V @ 300µA 31.5 nC @ 10 V 650 V ±20V 870 pF @ 100 V - - PG-VSON-4 - 83.3W (Tc) -40°C ~ 150°C (TJ)
IPL65R660E6AUMA1

IPL65R660E6AUMA1

MOSFET N-CH 650V 7A THIN-PAK

Infineon Technologies

5,788 -
IPL65R660E6AUMA1

数据表

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 660mOhm @ 2.1A, 10V Surface Mount 3.5V @ 200µA 23 nC @ 10 V 650 V ±20V 440 pF @ 100 V - - PG-VSON-4 - 63W (Tc) -40°C ~ 150°C (TJ)
IPP120P04P404AKSA1

IPP120P04P404AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies

3,291 -
IPP120P04P404AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.8mOhm @ 100A, 10V Through Hole 4V @ 340µA 205 nC @ 10 V 40 V ±20V 14790 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
IPP65R190CFDAAKSA1

IPP65R190CFDAAKSA1

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies

5,088 -
IPP65R190CFDAAKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V Through Hole 4.5V @ 700µA 68 nC @ 10 V 650 V ±20V 1850 pF @ 100 V AEC-Q101 - PG-TO220-3 Automotive 151W (Tc) -40°C ~ 150°C (TJ)
IPP80P03P405AKSA1

IPP80P03P405AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies

5,569 -
IPP80P03P405AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5mOhm @ 80A, 10V Through Hole 4V @ 253µA 130 nC @ 10 V 30 V ±20V 10300 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 137W (Tc) -55°C ~ 175°C (TJ)
IPP80P04P4L04AKSA1

IPP80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

2,581 -
IPP80P04P4L04AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V Through Hole 2.2V @ 250µA 176 nC @ 10 V 40 V +5V, -16V 3800 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
IPP80P04P4L06AKSA1

IPP80P04P4L06AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

2,198 -
IPP80P04P4L06AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V Through Hole 2.2V @ 150µA 104 nC @ 10 V 40 V +5V, -16V 6580 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 88W (Tc) -55°C ~ 175°C (TJ)
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