| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPL65R340CFDAUMA1MOSFET N-CH 650V 10.9A THIN-PAK Infineon Technologies |
4,797 | - |
|
数据表 |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | Surface Mount | 4.5V @ 400µA | 41 nC @ 10 V | 650 V | ±20V | 1100 pF @ 100 V | - | - | PG-VSON-4 | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) |
|
IPD135N03LGBTMA1LV POWER MOS Infineon Technologies |
8,150 | - |
|
数据表 |
OptiMOS™ 3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 10 nC @ 10 V | 30 V | ±20V | 1000 pF @ 15 V | - | - | PG-TO252-3 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
IPL65R420E6AUMA1MOSFET N-CH 650V 10.1A THIN-PAK Infineon Technologies |
6,988 | - |
|
数据表 |
CoolMOS™ E6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.1A (Tc) | 10V | 420mOhm @ 3.4A, 10V | Surface Mount | 3.5V @ 300µA | 39 nC @ 10 V | 650 V | ±20V | 710 pF @ 100 V | - | - | PG-VSON-4 | - | 83W (Tc) | -40°C ~ 150°C (TJ) |
|
IPL65R460CFDAUMA1MOSFET N-CH 650V 8.3A THIN-PAK Infineon Technologies |
2,551 | - |
|
数据表 |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.3A (Tc) | 10V | 460mOhm @ 3.4A, 10V | Surface Mount | 4.5V @ 300µA | 31.5 nC @ 10 V | 650 V | ±20V | 870 pF @ 100 V | - | - | PG-VSON-4 | - | 83.3W (Tc) | -40°C ~ 150°C (TJ) |
|
IPL65R660E6AUMA1MOSFET N-CH 650V 7A THIN-PAK Infineon Technologies |
5,788 | - |
|
数据表 |
CoolMOS™ E6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 660mOhm @ 2.1A, 10V | Surface Mount | 3.5V @ 200µA | 23 nC @ 10 V | 650 V | ±20V | 440 pF @ 100 V | - | - | PG-VSON-4 | - | 63W (Tc) | -40°C ~ 150°C (TJ) |
|
IPP120P04P404AKSA1MOSFET P-CH 40V 120A TO220-3 Infineon Technologies |
3,291 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | Through Hole | 4V @ 340µA | 205 nC @ 10 V | 40 V | ±20V | 14790 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP65R190CFDAAKSA1MOSFET N-CH 650V 17.5A TO220-3 Infineon Technologies |
5,088 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 4.5V @ 700µA | 68 nC @ 10 V | 650 V | ±20V | 1850 pF @ 100 V | AEC-Q101 | - | PG-TO220-3 | Automotive | 151W (Tc) | -40°C ~ 150°C (TJ) |
|
IPP80P03P405AKSA1MOSFET P-CH 30V 80A TO220-3 Infineon Technologies |
5,569 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5mOhm @ 80A, 10V | Through Hole | 4V @ 253µA | 130 nC @ 10 V | 30 V | ±20V | 10300 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 137W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP80P04P4L04AKSA1MOSFET P-CH 40V 80A TO220-3 Infineon Technologies |
2,581 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | Through Hole | 2.2V @ 250µA | 176 nC @ 10 V | 40 V | +5V, -16V | 3800 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP80P04P4L06AKSA1MOSFET P-CH 40V 80A TO220-3 Infineon Technologies |
2,198 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | Through Hole | 2.2V @ 150µA | 104 nC @ 10 V | 40 V | +5V, -16V | 6580 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 88W (Tc) | -55°C ~ 175°C (TJ) |