Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 617

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPI120P04P4L03AKSA1 MOSFET P-CH 40V 120A TO262-3 Infineon Technologies	8,811	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	120A (Tc)	4.5V, 10V	3.4mOhm @ 100A, 10V	Through Hole	2.2V @ 340µA	234 nC @ 10 V	40 V	±16V	15000 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	136W (Tc)	-55°C ~ 175°C (TJ)
IPI65R280E6XKSA1 MOSFET N-CH 650V 13.8A TO262-3 Infineon Technologies	9,829	-	询价单	数据表	CoolMOS™ E6	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	13.8A (Tc)	10V	280mOhm @ 4.4A, 10V	Through Hole	3.5V @ 440µA	45 nC @ 10 V	650 V	±20V	950 pF @ 100 V	-	-	PG-TO262-3-1	-	104W (Tc)	-55°C ~ 150°C (TJ)
IPI80P03P405AKSA1 MOSFET P-CH 30V 80A TO262-3 Infineon Technologies	4,711	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5mOhm @ 80A, 10V	Through Hole	4V @ 253µA	130 nC @ 10 V	30 V	±20V	10300 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	137W (Tc)	-55°C ~ 175°C (TJ)
IPI80P04P405AKSA1 MOSFET P-CH 40V 80A TO262-3 Infineon Technologies	8,067	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.2mOhm @ 80A, 10V	Through Hole	4V @ 250µA	151 nC @ 10 V	40 V	±20V	10300 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	125W (Tc)	-55°C ~ 175°C (TJ)
IPI80P04P4L04AKSA1 MOSFET P-CH 40V 80A TO262-3 Infineon Technologies	8,204	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.7mOhm @ 80A, 10V	Through Hole	2.2V @ 250µA	176 nC @ 10 V	40 V	+5V, -16V	3800 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	125W (Tc)	-55°C ~ 175°C (TJ)
SN7002W E6327 MOSFET N-CH 60V 230MA SOT323-3 Infineon Technologies	4,675	-	询价单	数据表	SIPMOS®	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	230mA (Ta)	4.5V, 10V	5Ohm @ 230mA, 10V	Surface Mount	1.8V @ 26µA	1.5 nC @ 10 V	60 V	±20V	45 pF @ 25 V	-	-	PG-SOT323	-	500mW (Ta)	-55°C ~ 150°C (TJ)
IPL65R165CFDAUMA1 MOSFET N-CH 650V 21.3A 4VSON Infineon Technologies	6,819	-	询价单	数据表	CoolMOS™	4-PowerTSFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21.3A (Tc)	10V	165mOhm @ 9.3A, 10V	Surface Mount	4.5V @ 900µA	86 nC @ 10 V	650 V	±20V	2340 pF @ 100 V	-	-	PG-VSON-4	-	195W (Tc)	-40°C ~ 150°C (TJ)
IPL65R190E6AUMA1 MOSFET N-CH 650V 20.2A 4VSON Infineon Technologies	7,482	-	询价单	数据表	CoolMOS™ E6	4-PowerTSFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20.2A (Tc)	10V	190mOhm @ 7.3A, 10V	Surface Mount	3.5V @ 700µA	73 nC @ 10 V	650 V	±20V	1620 pF @ 100 V	-	-	PG-VSON-4	-	151W (Tc)	-40°C ~ 150°C (TJ)
IPL65R210CFDAUMA1 MOSFET N-CH 650V 16.6A 4VSON Infineon Technologies	6,956	-	询价单	数据表	CoolMOS™	4-PowerTSFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16.6A (Tc)	10V	210mOhm @ 7.3A, 10V	Surface Mount	4.5V @ 700µA	68 nC @ 10 V	650 V	±20V	1850 pF @ 100 V	-	-	PG-VSON-4	-	151W (Tc)	-40°C ~ 150°C (TJ)
IPL65R310E6AUMA1 MOSFET N-CH 650V 13.1A THIN-PAK Infineon Technologies	2,333	-	询价单	数据表	CoolMOS™ E6	4-PowerTSFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.1A (Tc)	10V	310mOhm @ 4.4A, 10V	Surface Mount	3.5V @ 400µA	45 nC @ 10 V	650 V	±20V	950 pF @ 100 V	-	-	PG-VSON-4	-	104W (Tc)	-40°C ~ 150°C (TJ)

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