富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFH7182TRPBF

IRFH7182TRPBF

MOSFET N-CH 100V 23A/157A 8PQFN

Infineon Technologies

3,024 -
IRFH7182TRPBF

数据表

FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta), 157A (Tc) 10V 3.9mOhm @ 50A, 10V Surface Mount 3.6V @ 250µA 74 nC @ 10 V 100 V ±20V 3120 pF @ 50 V - - 8-PQFN (5x6) - 4W (Ta), 195W (Tc) -55°C ~ 150°C (TJ)
AUIRFP4310Z

AUIRFP4310Z

MOSFET N-CH 100V 128A TO247AC

Infineon Technologies

9,029 -
AUIRFP4310Z

数据表

HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 128A (Tc) 10V 6mOhm @ 77A, 10V Through Hole 4V @ 150µA 188 nC @ 10 V 100 V ±20V 7120 pF @ 50 V AEC-Q101 - PG-TO247-3 Automotive 278W (Tc) -55°C ~ 175°C (TJ)
AUIRFS4127

AUIRFS4127

MOSFET N-CH 200V 72A D2PAK

Infineon Technologies

2,072 -
AUIRFS4127

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 22mOhm @ 44A, 10V Surface Mount 5V @ 250µA 150 nC @ 10 V 200 V ±20V 5380 pF @ 50 V AEC-Q101 - PG-TO263-3 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
AUIRFSA8409-7P

AUIRFSA8409-7P

MOSFET N-CH 40V 523A D2PAK

Infineon Technologies

5,276 -
AUIRFSA8409-7P

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 523A (Tc) 10V 0.69mOhm @ 100A, 10V Surface Mount 3.9V @ 250µA 460 nC @ 10 V 40 V ±20V 13975 pF @ 25 V AEC-Q101 - PG-TO263-7 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
AUIRLS8409-7P

AUIRLS8409-7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

2,164 -
AUIRLS8409-7P

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 240A (Tc) 4.5V, 10V 0.75mOhm @ 100A, 10V Surface Mount 2.4V @ 250µA 266 nC @ 4.5 V 40 V ±16V 16488 pF @ 25 V AEC-Q101 - PG-TO263-7 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
AUIRLU3114Z

AUIRLU3114Z

MOSFET N-CH 40V 130A TO251-3

Infineon Technologies

8,991 -
AUIRLU3114Z

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 130A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V Through Hole 2.5V @ 100µA 56 nC @ 4.5 V 40 V ±16V 3810 pF @ 25 V AEC-Q101 - PG-TO251-3 Automotive 140W (Tc) -55°C ~ 175°C (TJ)
BSS87 E6433

BSS87 E6433

MOSFET N-CH 240V 260MA SOT89

Infineon Technologies

4,325 -
BSS87 E6433

数据表

SIPMOS® TO-243AA Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V Surface Mount 1.8V @ 108µA 5.5 nC @ 10 V 240 V ±20V 97 pF @ 25 V - - PG-SOT89 - 1W (Ta) -55°C ~ 150°C (TJ)
IPU090N03L G

IPU090N03L G

MOSFET N-CH 30V 40A TO251-3

Infineon Technologies

6,256 -
IPU090N03L G

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 15 nC @ 10 V 30 V ±20V 1600 pF @ 15 V - - PG-TO251-3 - 42W (Tc) -55°C ~ 175°C (TJ)
62-0095PBF

62-0095PBF

MOSFET N-CH 20V 10A/12A 8SOIC

Infineon Technologies

9,346 -
62-0095PBF

数据表

- - Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 12A (Tc) 10V 13.4mOhm @ 10A, 10V Surface Mount 2.55V @ 250µA 11 nC @ 4.5 V 20 V - 900 pF @ 10 V - - - - 2W -55°C ~ 150°C (TJ)
62-0136PBF

62-0136PBF

MOSFET N-CH 30V 19A 8-SOIC

Infineon Technologies

7,341 -
62-0136PBF

数据表

- - Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 4.5mOhm @ 19A, 10V Surface Mount 2.25V @ 250µA 44 nC @ 4.5 V 30 V ±20V 3710 pF @ 15 V - - - - 2.5W -55°C ~ 150°C (TA)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户