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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP80P04P4L08AKSA1MOSFET P-CH 40V 80A TO220-3 Infineon Technologies |
9,250 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | Through Hole | 2.2V @ 120µA | 92 nC @ 10 V | 40 V | +5V, -16V | 5430 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
IPS65R600E6AKMA1MOSFET N-CH 650V 7.3A TO251-3 Infineon Technologies |
5,655 | - |
|
数据表 |
CoolMOS™ E6 | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | Through Hole | 3.5V @ 210µA | 23 nC @ 10 V | 650 V | ±20V | 440 pF @ 100 V | - | - | PG-TO251-3-11 | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW65R190CFDAFKSA1MOSFET N-CH 650V 17.5A TO247-3 Infineon Technologies |
6,525 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 4.5V @ 700µA | 68 nC @ 10 V | 650 V | ±20V | 1850 pF @ 100 V | AEC-Q101 | - | PG-TO247-3 | Automotive | 151W (Tc) | -40°C ~ 150°C (TJ) |
|
IPW80R290C3AFKSA1MOSFET N-CH 800V TO247 Infineon Technologies |
5,662 | - |
|
数据表 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPZ60R125P6FKSA1MOSFET N-CH 600V 37.9A TO247-4 Infineon Technologies |
6,737 | - |
|
数据表 |
CoolMOS™ P6 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | Through Hole | 4.5V @ 1.21mA | 70 nC @ 10 V | 600 V | ±20V | 3330 pF @ 100 V | - | - | PG-TO247-4 | - | 219W (Tc) | -55°C ~ 150°C (TJ) |
|
SN7002WH6433XTMA1MOSFET N-CH 60V 230MA SOT-323 Infineon Technologies |
6,697 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | 4.5V, 10V | - | - | - | - | - | ±20V | - | - | - | - | - | - | - |
|
|
IPP45N06S4L08AKSA2MOSFET N-CH 60V 45A TO220-3 Infineon Technologies |
3,276 | - |
|
数据表 |
OptiMOS™ T2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 8.2mOhm @ 45A, 10V | Through Hole | 2.2V @ 35µA | 64 nC @ 10 V | 60 V | ±16V | 4780 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP90N06S404AKSA2MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
2,289 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | Through Hole | 4V @ 90µA | 128 nC @ 10 V | 60 V | ±20V | 10400 pF @ 25 V | AEC-Q101 | - | PG-TO220-3-1 | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF1902TRPBFMOSFET N-CH 20V 4.2A 8SO Infineon Technologies |
4,083 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.2A (Ta) | 2.7V, 4.5V | 85mOhm @ 4A, 4.5V | Surface Mount | 700mV @ 250µA | 7.5 nC @ 4.5 V | 20 V | ±12V | 310 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRL60SL216MOSFET N-CH 60V 195A TO262-3 Infineon Technologies |
4,542 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | Through Hole | 2.4V @ 250µA | 255 nC @ 4.5 V | 60 V | ±20V | 15330 pF @ 25 V | - | - | TO-262-3 | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
